TO-220-3L Plastic-Encapsulate Transistors MJE3055

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
MJE3055
TRANSISTOR (NPN)
TO-220-3L
1. BASE
FEATURES
2. COLLECTOTR
3. EMITTER
General Purpose and Switching Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
10
A
Collector Power Dissipation
2
W
150
℃
-55-150
℃
PC
Junction Temperature
Tj
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA, IE=0
70
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=200mA, IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA, IC=0
5
V
Collector cut-off current
ICBO
VCB=70V, IE=0
1
mA
Emitter cut-off current
IEBO
VEB=5V, IC=0
5
mA
hFE(1) *
VCE=4V, IC=4A
20
100
hFE(2) *
VCE=4V, IC=10A
5
VCE(sat) *
IC=4A, IB=0.4A
1.1
V
VCE(sat) *
IC=10A, IB=3.3A
8
V
1.8
V
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
VBE*
Transition frequency
fT
VCE=4V, IC=4A
VCE=10V, IC=0.5A
2
Note:*Pulse test: tp≤300μS, δ≤0.02.
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MHz
Typical Characteristics
300
COMMON
EMITTER
Ta=25℃
100mA 90mA
80mA
——
IC
70mA
(A)
5
4
100
DC CURRENT GAIN
50mA
40mA
3
30mA
2
20mA
1
Ta=100℃
hFE
60mA
IC
hFE
Static Characteristic
6
COLLECTOR CURRENT
MJE3055
Ta=25℃
IB=10mA
COMMON EMITTER
VCE= 4V
0
10
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
3000
6
1
10
100
1000
COLLECTOR CURRENT
VCE (V)
VCEsat
IC
IC
——
10000
(mA)
IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
BDTIC
β=3,Ta=25℃
β=10,Ta=25℃
1000
β=3,Ta=100 ℃
β=10,Ta=100 ℃
100
10
100
1000
COLLECTOR CURREMT
β=3,Ta=100 ℃
10
β=3,Ta=25℃
IC
10000
1
10
(mA)
100
10000
(mA)
(MHz)
COMMON EMITTER
VCE=4V
IC
fT — — IC
30
10
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
fT
IC
1000
100
1000
COLLECTOR CURRENT
IC — — VBE
10000
(mA)
β=10,Ta=100 ℃
β=10,Ta=25℃
1
1
COLLECTOR CURRENT
100
10
COMMON EMITTER
VCE=10V
Ta=25℃
1
0
200
400
600
800
1000
1200
1400
BASE-EMMITER VOLTAGE VBE (V)
PC
——
1
0.1
0.2
0.3
COLLECTOR CURRENT
Ta
COLLECTOR POWER DISSIPATION
PC (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
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75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
0.4
IC
0.5
(A)
0.6