TO-126 Plastic-Encapsulate Transistors BD234/236/238

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD234/236/238
TRANSISTOR (PNP)
TO-126
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VEBO
PC
TJ
Tstg
Value
Unit
BD234
BD236
BD238
Collector-Emitter Voltage
BD234
BD236
BD238
Emitter-Base Voltage
BD234
BD236
BD238
Collector Current –Continuous
-45
-60
-100
-45
-60
-80
V
-2
A
Collector Power Dissipation
1.25
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Collector-Base Voltage
2. COLLECTOR
BDTIC
VCEO
IC
Parameter
1. EMITTER
3. BASE
V
V
-5
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BD234
BD236
BD238
BD234
BD236
BD238
Emitter-base breakdown voltage
Collector cut-off current
BD234
BD236
BD238
Emitter cut-off current
Test
conditions
V(BR)CBO
IC=-1mA,IE=0
V(BR)CEO
IC=-100mA,IB=0
V(BR)EBO
IE=-1mA,IC=0
Min
Max
-45
-60
-100
-45
-60
-80
V
V
-5
ICBO
VCB=-45V, IE=0
VCB=-60V, IE=0
VCB=-100V, IE=0
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-2V, IC=-150mA
40
hFE(2)
VCE=-2V, IC=-1A
25
Unit
V
-100
µA
-1
mA
-0.6
V
DC current gain
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=-1A, IB=-100m A
VCE=-10V, IC=-250mA,
f =10MHz
www.BDTIC.com/jcst
3
MHz