SOT-23 Plastic-Encapsulate Transistors 2SC5343

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC5343
SOT-23
TRANSISTOR (NPN)
FEATURES
z
Excellent hFE Linearity
Low Noise
z
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
IB
Base Current -Continuous
50
mA
PC
Collector Power dissipation
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
T est conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE(1)
VCE=6V,IC=2mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
Collector output capacitance
Cob
Noise figure
NF
70
IC=100mA,IB=10mA
700
0.1
VCE=10V,IC=1mA
0.25
80
VCB=10V,IE=0,f=1MHz
VCE=6V,IC=0.1mA,
f=1kHz,Rg=10kΩ
V
MHz
3.5
pF
10
dB
CLASSIFICATION OF hFE
Rank
Range
O
70-140
Y
120-240
G
200-400
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L
300-700
%,6HS,201
2SC5343
Typical Characteristics
Static Characteristic
10uA
COLLECTOR CURRENT
hFE
8uA
2.5
7uA
2.0
6uA
5uA
1.5
4uA
3uA
1.0
VCE=6V
o
Ta=100 C
COMMON
EMITTER
Ta=25℃
9uA
IC
(mA)
3.0
hFE —— IC
1000
DC CURRENT GAIN
3.5
o
Ta=25 C
100
2uA
0.5
IB=1uA
0.0
0
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE
8
VCE
9
10
0.1
10
VBEsat —— IC
1.0
1
10
COLLECTOR CURRENT
(V)
VCEsat ——
300
IC
100 150
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
0.9
0.8
Ta=25℃
0.7
0.6
Ta=100℃
β=10
200
100
Ta=100℃
0.5
Ta=25℃
0.4
0
1
10
100
COLLECTOR CURRENT
fT
1000
——
IC
(mA)
10
100
COLLECTOR CURRENT
IC
15
Cob / Cib
——
IC
150
(mA)
VCB / VEB
(MHz)
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
CAPACITANCE
C
fT
TRANSITION FREQUENCY
1
150
100
10
Cib
5
Cob
VCE=10V
o
Ta=25 C
10
1
10
100
COLLECTOR CURRENT
Pc
COLLECTOR POWER DISSIPATION
Pc (mW)
250
——
IC
0.1
1
REVERSE VOLTAGE
(mA)
10
V
20
(V)
Ta
200
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
%,6HS,201