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SIRAD irradiation facility - Laboratori Nazionali di Frascati

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SIRAD irradiation facility - Laboratori Nazionali di Frascati
Irradiation facilities
for semiconductor detectors and electronics
at the INFN National Laboratory of Legnaro
Andrea Candelori
Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Padova
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
OUTLINE
• The SIRAD irradiation facility at the TANDEM accelerator:
- high energy protons and ions.
• The CN accelerator:
- protons and neutrons.
• Total dose tests:
- Tungsten (W) and Molybdenum (Mo) X-rays;
- 60Co -rays.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
The SIRAD Irradiation Facility
The SIRAD irradiation facility is located at the Tandem accelerator of
the INFN National Laboratory of Legnaro (Padova, Italy).
Tandem accelerator:
-Van de Graaff type;
15 MV maximum voltage;
two strippers;
-servicing 3 experimental halls for nuclear and interdisciplinary Physics;
Schematics of the 15 MV Tandem Van de Graaff accelerator and of the SIRAD irradiation facility
at the +70º beam line (left). A photograph of the SIRAD irradiation facility is also shown for
completeness (right).
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Typical ion species available at SIRAD
• Ion species from 1H (22-30 MeV) up to 197Au (1.4 MeV/a.m.u.)
• LET from 0.02 MeVcm2/mg (1H) up to 81.7 MeVcm2/mg (197Au)
The energy values refer to the most probable q1 and q2 charge state,
with two stripper stations, and the Tandem operating at 14 MV.
Ion Species
1
H
Li
11
B
12
C
16
O
19
F
28
Si
32
S
35
Cl
48
Ti
51
V
58
Ni
63
Cu
74
Ge
79
Br
107
Ag
127
I
197
Au
7
1st multi-source
2nd multi-source
Energy
(MeV)
28
56
80
94
108
122
157
171
171
196
196
220
220
231
241
266
276
275
q1
q2
1
3
4
5
6
7
8
9
9
10
10
11
11
11
11
12
12
13
1
3
5
6
7
8
11
12
12
14
14
16
16
17
18
20
21
26
Range in Si
(m)
4390
378
195
171
109
99.3
61.5
54.4
49.1
39.3
37.1
33.7
33.0
31.8
31.3
27.6
27.9
23.4
Surface LET in Si
(MeVcm2/mg)
0.02
0.37
1.01
1.49
2.85
3.67
8.59
10.1
12.5
19.8
21.4
28.4
30.5
35.1
38.6
54.7
61.8
81.7
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Low flux (102-105 ions/cm2s) irradiation set-up on 22 cm2
Sample holder
2
5x5 cm aperture
Defocused 1 nA
ion beam
Geometric aperture 2x2 cm2
Mobile diode board
5 cm
2 cm
Irradiation chamber
Mobile diodes
Fixed diode board
Fixed diodes
Devices for SEE tests
The on-line beam monitoring system for defocused beams by the fixed and mobile diodes:
-left: side view of the experimental set-up;
-right: front view (transverse to the beam) of the fixed and mobile diode boards.
The mobile diodes are mounted on the sample holder with the DUT. The figure is not drawn to scale.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
High flux (>108-109 ions/cm2s) irradiation set-up on 55 cm2
Sample holder
Square 3x3
Faraday cup battery
5x5 cm2aperture
Focused and rastered
Ion or proton beam
5 cm
Irradiation Chamber
R
Device under test
M
I=V/(R||Rin) U
L
T
I
Rin
M
E
T
E
R
The on-line beam monitoring for rastered proton and ion beams by the 33 battery of Faraday cups
positioned behind the DUT: side view of the experimental setup. The aperture of each Faraday cup is
0.60.6 cm2. The figure is not drawn to scale.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Example of validation for space mission
Validation of the ASIC for the GLAST Large Area Telescope
• GLAST space telescope
• International collaboration (NASA, ESA, ASI, INFN,...)
• INFN Padova: radiation tests of tracker, DAQ electronics
• ASICs validated for SEE at SIRAD
• ASICs validated for TD at CNR-ISOF 60Co -ray source
• COTS validated for SEE at SIRAD
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Summary of the main research activities at SIRAD
SEE in FPGA
Device Cross Section (cm 2)
SEE in ASICs for CMS, GLAST, AGILE, ALICE
10-1
10-2
10-3
10-4
Weibull fit
10-5
10-6
small design
10
-7
large design
10
-8
0
SEB, SEGR in power MOSFETs
Charge loss in Flash E2PROM
80
60
40
20
LET (MeV cm2/mg)
RILC and RSB (Ultra-thin gate oxide)
|Neff| (cm-3)
6·1012
Silicon detectors
MSTD
=(50.6  2.6)·10-3 cm-1
5·1012
MOXY
STSTD
=(17.1  1.1)·10-3 cm-1
=(29.7  3.0)·10-3 cm-1
4·1012
STOXY,30h =(17.0  1.9)·10-3 cm-1
3·1012
2·1012
1·1012
0
0
3·1013
6·1013
 (27 MeV p/cm2)
More than 61 papers published in the last 4 years.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
9·1013
12·1013
Beam time allocation at SIRAD in 2004
January 2004- December 2004 (432 hours, 18 days)
6) Nanomembranes 1) CMOS and Bipolar
5c) SEE
2%
technologies
in ASIC and COTS
12%
11%
2) Bulk damage
in silicon detectors
5b) SEE
6%
in FPGA
11%
3) IEEM
11%
5a) SEE in SDRAM
and Flash memories
12%
4) SEB and SEGR
in power MOSFETs
36%
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Beam time allocation at SIRAD in 2001-2004
January 2001- December 2004 (2179 hours, 91 days)
5c) SEE
in ASIC and COTS
21%
5b) SEE
in FPGA
14%
5a) SEE in Memories
7%
1) CMOS and Bipolar
6) Others
technologies
1%
7%
2) Bulk damage
in silicon detectors
12%
3) Secondary Electron
Emission and IEEM
10%
4) SEB and SEGR
in power devices
28%
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
SIRAD Collaboration in Italy and abroad
1) Dip. di Fisica and INFN Padova
2) INFN Laboratori Nazionali di Legnaro
3) Dip. Ingegneria dell’Informazione, Padova
4) Tecnomare SpA (Venezia)
5) Center for Advance Space Optics (Trieste)
6) Dip. Fisica and INFN, Trieste
7) ITC-IRST (Trento)
8) Dip. Informatica e Telecomunicazioni, Trento
9) INAF, Sezione di Milano
10)ST Microelectronics (Agrate Brianza, Milano)
11) Dip. Elettronica, Pavia
12) Dip. Ingegneria Industriale, Bergamo
13) Dipartimento di Fisica Sperimentale, Torino
14) Dip. Automatica e Informatica,Politecnico di Torino
15) Dip Fisica and INFN, Bologna
16) Dip. Energetica and INFN, Firenze
17) Aurelia Microelettronica S.p.A. (Viareggio)
18) Dip.Ingegneria Elettronica, Università Roma 2
19) INAF, Sezione di Roma
20) DAEIMI e DSM, Università di Cassino
21) ST Microelectronics (Catania)
BERGAMO
PAVIA
PADOVA
VIAREGGIO
CASSINO
A) Institut für Experimentalphysik (Amburgo, Germania)
B) LETI (Grenoble, Francia)
C) Centro Nacional de Microelectronica (Barcellona, Spagna)
D) IMEC (Lovanio, Belgio)
E) Philips Semiconductor (Nijmegen, Olanda)
F) CERN (Ginevra, Svizzera)
G) Helsinki Institute of Physics (Finland)
H) Santa Cruz Institute for Particle Physica (California, U.S.A)
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
CN accelerator
Characteristics: Van de Graaff type, 7 MV maximum voltage;
Ion species: p (1H); d (2H); t (3H); 4He (single or double charge) and 15N (double charge)
Max energy: 7 MeV for single charged species;14 MeV for 4He++; 8 MeV for 15N++.
T(d,n)4He
9Be(d,n)10B
with moderator
D(d,n)3He
7Li(p,n)7Be
9Be(d,n)10B
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
CN accelerator: neutron beams
Formula
D(d,n)3He
T(d,n)4He
7
Li(p,n)7Be
9
Be(d,n)10B
9
Be(d,n)10B
with moderator
Ebeam
(MeV)
2-7
2-7
2-7
2.6-7
2.6-7
Table II
Neutron sources at the CN accelerator
Imax
Spectra
Reference
Eneutrons at 0
(nA)
(MeV)
100 Monochromatic
5-10
Rev. Mod. Phys. (1956) 103-134
100 Monochromatic
18-24
Rev. Mod. Phys. (1956) 103-134
500 Monochromatic
0.2-5
NIM A 238 (1985) 443-452
300
Continuos
0.06-11.4
NIM A324 (1993) 239-246
-6
300
Thermal
NIM A489 (2002) 347-369
<0.410
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
W and Mo X-rays: Seifert Rp-149 Irradiation Facility
• Tube with W (7.4-12.06 keV L-lines) or Mo (17.4-19.6 keV K-lines) anode.
• Maximum tube voltage 60 kV. Maximum tube current 50 mA.
• X,Y (motorized) and Z (manual) axis for accurate position setting of the tube.
• Radiation hardness qualification of the APV25 chip for the CMS silicon tracker.
X-ray tube
Y axis motor
Laser pointer
Semi-automatic
probestation
Z
Y
X
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
W and Mo X-rays: radiation field dimensions
140
D=10 cm
D=15 cm
D=20 cm
D=40 cm
Dose rate (rad(Si)/s)
120
100
13.9 mm
80
60
15.5 mm
40
16.1 mm
20
20.6 mm
0
-20
-15
-10
-5
0
5
10
15
20
10
15
20
X position (mm)
140
D=10 cm
D=15 cm
D=20 cm
D=40 cm
Dose rate (rad(Si)/s)
120
100
7.2 mm
80
60
9.2 mm
40
11.4 mm
20
19.4 mm
0
-20
-15
-10
-5
0
5
Y position (mm)
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
60Co
-ray source (CNR-ISOF)
• Irradiation Facility: Panoramic Gammabeam model 150 A
produced by Nordion Ltd (Canada)
• Photon energies: 1.165 MeV and 1.332 MeV
• Present activity: 2000 Ci ( 7.41013 Bq)
• Point source for D>10 cm (D=10-300 cm)
• Dose rate: ~5 rad(Si)/s at D=20 cm, ~1 rad(Si)/s at D=45 cm
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Conclusions
• The SIRAD irradiation facility at the 15 MV TANDEM accelerator:
- Ion species from 1H (23-30 MeV) up to 197Au (1.4 MeV/a.m.u.)
- LET from 0.02 MeVcm2/mg up to 81.7 MeVcm2/mg
- High (>108-109 ions/cm2s) and low (102-106 ions/cm2s) flux set-up
- Ion Electron Emission Microscopy possibility
- New irradiation chamber and sample holder (ESA standards)
• The CN accelerator:
- Monochromatic spectra: D(d,n)3He, T(d,n)4He, 7Li(p,n)7Be
- Continuous spectra: 9Be(d,n)10B
- Thermal neutrons: 9Be(d,n)10B with moderator
• Total dose tests:
- X-rays: W (L-lines at 7-12 keV) and Mo (K-lines at 17-20 keV) anode;
dose rate: 120 rad(Si)/s.
- -rays: 60Co with 1-5 rad(Si)/s dose rate (D=20-45 cm).
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
Scuola Nazionale
“Rivelatori ed elettronica per applicazioni
spaziali, Astrofisica e Fisica delle Alte
Energie”
INFN Laboratori Nazionali di Legnaro
4-8 Aprile 2005
More information on the web site
http://sirad.pd.infn.it/scuola_legnaro
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
What is SIRAD?
SIRAD is the acronym for SIlicon and RADiation.
The SIRAD irradiation facility is dedicated:
"to investigate radiation effects
on silicon detectors, electronic devices and systems
in radiation hostile environments".
-Total dose effects as a result of ionization damage.
-Bulk effects as a result of displacement damage.
-Single event effects as a result of an energetic particle strike.
-High energy physics experiments.
-Space missions of scientific and commercial satellites.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
SIRAD upgrade: the Ion Electron Emission Microscope (IEEM)
Purpose: Single Event Effect mapping, Ion Beam Induced Charge Collection studies.
Nuclear Microprobe: µ-focused beam
Object slit
Ion beam
Nuclear Microprobe:
magnet optics for
focusing (e.g. triplet)
and electron optics for
scanning
analysis of
signal
2D electron
detector at
focal plane of
electron optics
(Xhit,Yhit)
secondary
electrons

Ion beam
electron
optics
(Xbeam,Ybeam)
rastering pattern
IEEM: defocused beam (Sandia)
channeltron
hit confirmation by
secondary electrons
target
Resolution on target determined by beam optics
spot size and positioning.
coating
target
analysis of
signal
Resolution on target: lateral size of field of view
divided by linear line pair resolution of sensor.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
SIRAD upgrade: the Ion Electron Emission Microscope (IEEM)
UV lamp
(PEEM)
SIRAD
contrast diaphragm
I
I
lens
PSD
Image intensifier
The ion impact position on the target is determined by “imaging” the
position from which secondary electrons are emitted: the intrinsic resolution
is of the order of 0.6 m over a 250 m field of view.
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
IEEM images with UV lamp and ion beam
• Lattice step: 40 m
• Structure width is about 6 m.
• The lattice is made by copper.
UV lamp
223 MeV Br ion beam
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
W and Mo X-rays: emission spectra
1.0
Photons/(mAsmm2) at 750 mm
normalized to maximum
17.4 keV
7.6-12.06 keV
0.8
Mo
0.6
19.6 keV
W
0.4
W anode, 50kV, 0.1 mm Al filtration
Mo anode 30 kV, 0.1 mm Mo filtration
0.2
0.0
0
5
10
15
20
25
30
35
40
Photon energy (keV)
Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it
45
50
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