Mattiazzo_INFNspace3

SIRAD
AN IRRADIATION FACILITY FOR
RADIATION DAMAGE STUDIES
Serena Mattiazzo
Università di Padova
INFN/Space3
LNF September 18-19 2013
OUTLINE

The INFN Legnaro Laboratories (LNL)

The SIRAD ion facility

Proton beams @ LNL (Ion implanter, AN2000, CN)

Total Dose facilities

The Ion Electron Emission Microscope

Scientific activity @ SIRAD

Future plans
2
3
The INFN Legnaro Lab
4
SPES area
AN2000
CN
PIAVE
TANDEM
ACCELERATORS AT LNL
ALPI
TANDEM-ALPI-PIAVE COMPLEX
5
PIAVE
ALPI
XTU Tandem
1 & 2 Exp. Halls
3 Exp. Halls
Here is displayed
the PIAVETandem-ALPI
complex, the
beams being
injected by the
XTU Tandem
into the three
experimental
Halls, or in to
the
superconductive
LINAC
and then
distributed
to three
experimental
halls, two of
them are
shown.
[Slide courtesy of Dr. D. Carlucci]
6
The SIRAD beam line
@ Tandem accelerator
THE SIRAD IRRADIATION FACILITY
7
o The SIRAD irradiation facility is located at
the Tandem Accelerator of the INFN
National Laboratory of Legnaro
o Tandem accelerator:
o Van de Graaff type, 15MV (max
voltage), two strippers, servicing 3
experimental halls for nuclear and
interdisciplinary Physics
SIRAD is located in the
Experimental Hall 1, Beam line +70
ION BEAMS AVAILABLE AT SIRAD
o Typical ions available at
SIRAD serviced by the XTUTandem accelerator,
assuming:
•Tandem voltage at 14 MV,
•the most probable charge
state using two strippers.
o Note: The range and surface
LET are in silicon (SRIM).
o The magnetic rigidity is also
tabulated. The rigidity limit
of SIRAD is ~ 1.6 T-m
1st multi-source
(19F, 35Cl, 79Br, 127I)
2nd
multi-source
16
28
( O, Si, 58Ni, 107Ag)
8
𝐸 = 𝐸𝑖𝑛𝑗 + 𝑉0 ∙ 1 + 𝑞1 ∙ 𝑓 + 𝑞2 ∙ 1 − 𝑓
f = 0.25
q2
Rigidity
[T∙m]
Range
in Si
[m]
Surface
LET in Si
[MeV×cm2/mg]
1
1
0.77
4340
0.02
56
3
3
0.95
376
0.37
11B
80
4
5
0.86
185
1.13
12C
94
5
6
0.81
164
1.53
16O
108
6
7
0.86
107
2.95
19F
122
7
8
0.87
95
3.90
28Si
157
8
11
0.87
61
8.58
32S
171
9
12
0.89
54
11.1
35Cl
171
9
12
0.93
50
12.7
48Ti
196
10
14
1.00
40
20.9
51V
196
10
14
1.03
38
22.6
58Ni
220
11
16
1.02
37
29.4
63Cu
220
11
16
1.06
34
31.9
74Ge
231
11
17
1.11
33
36.9
79Br
241
11
18
1.10
33
41.8
107Ag
266
12
20
1.21
29
58.4
127I
276
12
21
1.28
30
65.4
197Au
275
13
26
1.52
26
79.1
Ion
Species
Energy
[MeV]
q1
1H
28
7Li
SEE CROSS SECTION IN SPACE
natural cutoff
100 MeV cm2/mg
9
(LET) of
device
SIRAD TECHNICAL CHARACTERISTICS
A x,y rastering system to irradiate large targets (bulk damage and TID
studies)
•
•
•
± 3.5-15 kV
625, 615 Hz
Linear ramp
10
SIRAD TECHNICAL CHARACTERISTICS
11
The chamber is open with
the sample holder exposed
The new (ESA style)
irradiation chamber
(active since 2006)
Diameter : 80 cm
Depth:
80 cm
It is used for global SEE tests, bulk
damage and TID studies
DIAGNOSTICS
12
 Cumulative effects (DDD, TID)
 Many particles at a time
 Single Particle Effects (SEE)
 One particle at a time
Effect
Particles
On-line
diagnostics
Flux
[ions/cm2∙s]
Single Event
Effect
One ion at a
time
PIN diode
(counting
electronics)
10-105
Bulk damage
effects
Many Protons
(lithium ions
too)
Faraday Cups
108-109
Total Dose
Effects
Many Ions
Faraday Cups
108-109
SIRAD TECHNICAL CHARACTERISTICS
13
The dosimetry systems
inside the irradiation
chamber
Mirror of the optical
inspection system
Pointing laser
Motorized sample holder
Horizontal transl.
30 cm
Vertical transl.
15 cm
Resolution
10 µm
Rotation axis
vertical, +/-80o (1o steps)
Fixed PIN Silicon
diodes board
http://www.youtube.com/watch?v=sKPew-nnfog
Faraday cup
CROSS SECTION MEASUREMENT AT SIRAD
1E-06
14
ESA SEU Monitor cross section at SIRAD
using ions from Tandem + ALPI accelerator
 [(cm2/bit)×(SEE/ions)]
1E-07
Br 550 MeV
1E-08
Ag 266 MeV
Ni 239 MeV
Ti 196 MeV
1E-09
Si 160 MeV
1E-10
O 108 MeV
1E-11
Esa reference values
1E-12
0
10
20
30
40
50
60
70
LET (MeV×cm2/mg)
80
90
100
110
120
15
Not only ion beams
(and not only SIRAD)


Proton beams up to 28 MeV
X-ray machine and 60Co  source
DOSE RATE AT TANDEM
16
Dose rate in Si
Dose rate [krad/s]
10
1
10MeV
15MeV
20MeV
0.1
25MeV
28MeV
0.01
0.01
0.1
Current density [nA/cm2]
• Beam energy can be degraded (to vary
the range) with absorbers of proper
thicknesses
1
Energy
[MeV]
LET0
[MeV×cm2/mg]
Range in Si
[mm]
10
3.48∙10-2
0.71
15
2.54∙10-2
1.44
20
1.12∙10-2
2.39
25
1.70∙10-2
3.55
28
1.56∙10-2
4.34
AN2000 AND CN ACCELERATORS
AN2000
o
o
o
o
o
o
o
o
Electrostatic accelerator, Van de Graaff type.
Single stage-Belt charging system.
Maximum terminal working voltage 2.5 MV.
Available accelerated ions: 1H, 4He single
charged (3He on request)
Continuous beam.
1 experimental hall; 5 beam lines.
Energy range: 0.25-2.2 MeV (up to 6mm2 with
unfocused beam but not uniform)
Beam current: few A max on a spot size of 23mm2
o
o
o
One of the beamlines is
dedicated to a proton
microbeam facility
Currents:
o 300 pA- 500 pA on a
spot of 1 m of
diameter
o 5 nA on a spot of 3
m of diameter
Possibility to rasterize the
microbeam over an area of
5×5mm2 on the focal plane
17
CN
o
o
o
o
o
Electrostatic accelerator (Van de Graaff type)
Maximum terminal working voltage: 7MV
Available accelerated ions:
o 1,2H, 3He, 4He single and double charged
o D, double charged
Continuous and pulsed beam
1 experimental hall, 7 beamlines
For single charged particles (1H, 2H, 4He)
o
o
Energy range: 0.85-6 MeV
Beam current:
o <5 A (depending on the channel, and
limited mainly by radioprotection
reasons) on a spot size of 2-3mm2
o Low limits not set by the machine;
beam intensity can be decreased with
the use of unfocused beam, slits, etc (a
«single ion microbeam» facility is also
available, down to few particles/s with
a spot size of  5 m)
Contact Person:
Dr. Valentino Rigato
LNL INFN
[email protected]
DOSE RATE AT AN2000 AND CN
18
Dose rate [krad/s]
10000
1000
0.5MeV
100
2MeV
4MeV
6MeV
10
1
1
10
100
Current density[nA/cm2]
Surface LET values and
range in Si
for energy values
0.5 MeV < En < 6 MeV
for a proton beam
1000
Energy
[MeV]
LET0
[MeV×cm2/mg]
Range in Si
[m]
0.5
2.55∙10-1
6
1
1.75∙10-1
16
2
1.12∙10-1
47
3
8.48∙10-2
92
4
6.90∙10-2
148
5
5.86∙10-2
216
6
5.12∙10-2
294
LOW ENERGY IRRADIATION
19
Ion implanter Danfysik 1090
Features:
o
o
o
o
o
o
Eion: 40-200 keV (proton range: 0.41.8m in Si)
Jbeam < 2A/cm2
Arearaster < 20 × 20 cm2
Fluenceion: 1011 1017 cm-2 (±10%)
Dosimetry: double Faraday
Ion species: see Periodic table
Contact Person:
Prof. Giovanni Mattei
Dip. Di Fisica e Astronomia
Univ Padova
[email protected]
Dose rate [Mrad/s]
100
40keV
10
100keV
1
150keV
0.1
200keV
0.01
1
10
100
Current density [nA/cm2]
1000
TOTAL DOSE STUDIES: X-RAY MACHINE
• Tube with W (7.4-12.06 keV L-lines) or Mo
(17.4-19.6 keV K-lines) anode.
• X,Y and Z (manual) axis for accurate position
setting of the tube.
• Radiation hardness qualification of the APV25
chip for the CMS silicon tracker.
Dose rate in Si (rad/sec)
X-ray tube
Z
Semi-automatic
probestation
Y
Dose rate in x and y
Dose rate in Si (rad/sec)
• Maximum tube voltage 60 kV. Maximum tube
current 50 mA.
X
20
600
15cm
10cm
500
400
300
200
100
0
-20
-10
0
10
X position (mm)
20
700
600
15cm
500
10cm
400
300
200
100
0
-20
-10
0
10
Y position (mm)
20
TOTAL DOSE STUDIES: 60CO  SOURCE
o
o
o
o
Managed by Legnaro LNL Laboratories
Irradiation
Facility:
Panoramic
Gammabeam model 150 produced by
Nordion Ltd (Canada)
Photon energies: 1.165 MeV and 1.332
MeV
Point source for D>10 cm (D=10-300cm)
Contact Person:
Dr. Roberto Cherubini
INFN LNL
[email protected]
Tel: +39 049 8068393
Distance from
source
Dose rate in Si
(Jan 2013)
60Co
source
shielding
21
20 cm
45 cm
1.85 rad/s
0.37 rad/s
6.67krad/h
1.32 krad/h
Source-containing
retracted cylinder
22
The Ion Electron
Emission Microscope
THE SIRAD IEEM
23
IEEM chamber
Position
detector
optics
Device
Under Test
Axial IEEM
The IEEM is a novel tool. The only one other one is at SANDIA Labs (B. Doyle – the
inventor of the technique)
Single energetic heavy ion impact points can be reconstructed with
a resolution of a few microns at a rate of 1kHz over a circular area
180 micron diameter.
AXIAL IEEM
UV light for focusing
STRIDE
Phototube for fast signal
(delay < 50 ns)
a) Beam splitter
b) PMT
c) Image Intensifier
d) STRIDE beam
splitter
e) Squeezing optics
f) NMOS sensors
24
AN EXAMPLE: SOIMAGER SHIFT REGISTER
25
Shift register cell schematics:
the two Flip Flop D are visible
The SOImager board
SOImager layout
The actual resolution of
the IEEM does not allow
us to untangle the most
sensitive nodes inside the
cell (we cannot say which
transistor is responsible
for an upset), but it is
sufficient to distinguish
the two Flip-Flops and
characterize their relative
sensitivity:
Shift Register cross section:
Weibull fits with Vbias=7V
(top) and Vbias=0V (bottom)
The sensitivity of the
Master Flip-Flop is
2.6 ± 0.1 times that of
than the Slave one.
a) Shift Register sensitivity map.
b) Shift register schematics
26
Beam allocation & activity at SIRAD
WHEN THE SIRAD IRRADIATION FACILITY STARTED…27
The facility was initially running in 1998 for bulk
damage studies in silicon detectors for High
Energy Physics applications in the framework of
the RD48 CERN Collaboration by proton
irradiation.
The facility was then considered in 2000 for Single
Event Effects (SEE) studies by ion irradiation in
microelectronics devices for space application in
collaboration with
DEI (Univ.Padova) and DIMSAT (Univ. Cassino).
The facility has been equipped with funds from:
•
Physics Department, Univ. Padova
•
INFN Section of Padova
•
INFN National Laboratory of Legnaro.
SUMMARY OF THE FIRST RESEARCH ACTIVITIES AT
SIRAD
SEE in FPGA
Device Cross Section (cm 2)
SEE in ASICs for CMS, FERMI, AGILE, ALICE
Charge loss in Flash E2PROM
10-1
10-2
10-3
10-4
Weibull fit
10-5
10-6
small design
10-7
large design
10
-8
0
20
40
60
LET (MeV cm2/mg)
80
RILC and RSB (Ultra-thin gate oxide)
Silicon detectors
6·1012
|Neff| (cm-3)
SEB, SEGR in power MOSFETs
28
MSTD
=(50.6  2.6)·10-3 cm-1
5·1012
MOXY
STSTD
=(17.1  1.1)·10-3 cm-1
=(29.7  3.0)·10-3 cm-1
4·1012
STOXY,30h =(17.0  1.9)·10-3 cm-1
3·1012
2·1012
1·1012
0
0
3·1013
6·1013
 (27 MeV p/cm2)
9·1013
12·1013
SIRAD COLLABORATION IN ITALY AND ABROAD
o SELEX Sistemi integrati, Roma
o CERN (Ginevra, Svizzera)
o Lawrence Berkeley National
Laboratory (LBNL, USA)
o Santa Cruz Institute for Particle
Physica (California, USA)
o and many others in the past…
Contact Person:
Prof. Dario Bisello
Dip. Physics and Astronomy,
Padova
[email protected]
Tel: +39 049 8277216
SIRAD beam time
28
24
Beam days at SIRAD
o Dip. di Fisica and INFN Padova
o INFN Laboratori Nazionali di
Legnaro
o Dip. Ingegneria dell’Informazione,
Padova
o Dip. Informatica e Telecomunicazioni,
Trento
o INFN Sezione di Trieste
o INAF Sezione di Milano
o Dip. Elettronica, Pavia
o Dip. Ingegneria Industriale, Bergamo
o IASF Bologna, INAF Bologna
o Dip. Automatica e Informatica,
Politecnico di Torino
o INFN sezione di Torino
o Dip.Ingegneria Elettronica,
Università Roma 2
o DAEIMI e DSM, Università di
Cassino
o INFN Sezione di Bari
29
20
16
12
8
4
0
2000
2002
2004
2006
2008
Year
2010
2012
PRESENT RESEARCH ACTIVITIES (1)
Institutions: INFN Padova, Torino, Bari, Trieste
Univ. Padova, Univ. Cassino
INAF-IASF Milano & Bologna
CERN, LBNL
1) SEMICON-MIR: "Semiconductor Relaxation Time for Quantum Vacuum Study”,
Spokesperson G. Carugno, INFN Padova
2) SOISEE: "Micromapping the sensitivity to Single Event Upsets of an electronic device in a SOI
technology at the LNL IEEM“,
Spokesperson D. Bisello, Collaboration: Univ. & INFN Padova, LBNL (Berkeley)
3) SEUTOPIX: "Single Event Upsets in the ToPix_3 ASIC for the pixel detector readout of the
PANDA Experiment“,
Spokesperson D. Calvo, INFN Torino
4) Single Event Effects in Non-volatile Memories
Spokesperson S. Gerardin, DEI, Univ. Padova
5) SEEPMOS: "Single Event Effects on Power MOSFET",
Spokesperson G. Busatto, DAEMI, Univ. Cassino & INFN Pisa
6) VELA: "Characterization of Single Event Transients on VELA, an ASIC for new generation
space-based astronomical instruments
Spokesperson M. Uslenghi, INAF-IASF, Milano
30
PRESENT RESEARCH ACTIVITIES (2)
31
7) "Heavy-Ion Effects on Programmable Systems On Chip",
Spokesperson A. Paccagnella, DEI, Univ. Padova & INFN Padova
8) LePIX: "Test of the uniformity in charge collection efficiency of the LePIX pixels with the
IEEM at SIRAD
Spokesperson P. Giubilato, Univ. Padova & CERN
9) GBLD-SEU: "Design of a radiation tolerant optical transceiver for HEP at CERN "
Spokesperson G. Mazza, INFN Torino
10) Upgrade of the ALICE Inner Tracking System (ITS):
Evaluation of the radiation hardness for detectors and read-out electronics
Reference person : M. Lunardon
11) Experiment CHIPSODIA: CHIP by Silicon On DIAmond (INFN Group V)
Evaluation and characterization of the monolithic diamond detectors with read-out electronics on
silicon by proton beams
Reference person at INFN Bari: A. Ranieri
12) Detectors & ASIC for Astrophysics
INAF-IASF Rome and Bologna
Reference persons at INASF-IASF Rome: E. Del Monte
at INASF-IASF Bologna: M. Marisaldi
13) SiPMRad
Radiation hardness of SiPM
Reference person at INFN Trieste: V. Bonvicini
32
Increase Ion Range with ALPI
RANGE AND SEE TESTING FACILITIES
• Ions must have sufficient energy to penetrate overlayers
• Need to evaluate LET at the correct depth
Have to keep into
account any dead
superficial layers
(plastic lid;
metallizations;…). At
Tandem need naked
devices (de-lidded). And
there are experimental
problems for some
types of devices (see
figure)
Sensitive volume
is down here!
Section of a chip, Courtesy of Barney Doyle
surface
16 m
FET
33
TANDEM ENERGIES ARE LIMITED…
34
… ALPI ENERGIES ARE BETTER FOR SEE TESTS
The heaviest ions should have higher ranges in silicon than those permitted by the
Tandem to ensure that the specific ionization be high where its is needed; i.e. in
depth where the sensitive nodes of the DUT are located.
The LET in silicon, as a function of the ion
depth, of an impinging 300 MeV Au ion falls
quickly away from the surface value. (SRIM)
The LET in silicon, as a function of the
ion depth, of an impinging 900 MeV Au
ion presents a broad plateau before
falling.
ION BEAMS AVAILABLE AT SIRAD
TANDEM
35
TANDEM+ALPI
q2
Energy
[MeV]
Range
in Si
[m]
Surface
LET in Si
[MeV×cm2/mg]
Energy
[MeV]
Range
in Si
[m]
Surface LET
in Si
[MeV×cm2/mg]
1
1
28
4340
0.02
-
-
-
7Li
3
3
56
376
0.37
-
-
-
11B
4
5
80
185
1.13
-
-
-
12C
5
6
94
164
1.53
-
-
-
16O
6
7
108
107
2.95
-
-
-
19F
7
8
122
95
3.90
-
-
-
28Si
8
11
157
61
8.58
542
373
3.9
32S
9
12
171
54
11.1
591
311
5.2
35Cl
9
12
171
50
12.7
591
268
6.2
48Ti
10
14
196
40
20.9
686
188
10.9
51V
10
14
196
38
22.6
686
171
12.2
58Ni
11
16
220
37
29.4
780
147
17.3
63Cu
11
16
220
34
31.9
780
135
19.1
74Ge
11
17
231
33
36.9
826
121
23.8
79Br
11
18
241
33
41.8
871
112
28.1
107Ag
12
20
266
29
58.4
966
83
49.4
127I
12
21
276
30
65.4
1011
77
61.8
197Au
13
26
275
26
79.1
1185
69
92.4
Ion
Species
q1
1H
THE IDEA
o At present, due to
limitation
in
the
switching magnet, we
can bend to the SIRAD
beam line ions with
magnetic rigidity up to
1.6 T∙m
o In order to decrease the
rigidities of heaviest
ALPI ions, we plan to
increase their charge
state using a single
carbon stripping foil
placed just before the
switching magnet
Defocused
beam onto
SIRAD target
36
Tandem
Tandem+Alpi
Piave+Alpi
Accelerator.
Analysis Magnet
post accelerator
analyzed beam; i.e. of
well defined energy
Post stripper
(carbon foil)
Q1
Q2 Different charge
states but of same
Q energy
n
Switching Magnet
Qi-1
Qi
Qi+1
Different charge
states but of same
energy
37
The future:
Proton and Neutron beams with SPES
THE SPES CYCLOTRON
38
At the INFN National Labs of Legnaro
(LNL), a variable energy (35-70 MeV)
high current proton cyclotron (Imax = 750
µA) will soon come into operation (2015):
the SPES (Study and Production of
Exotic Species) accelerator
It will open up the prospect of high flux
neutron facilities in Italy that could
perform various research activities.
A neutron irradiation facility has been proposed
for studying Singe Event Effects (SEE) in
microelectronic components and systems due to
neutrons (and protons) :

fast neutrons (En > 1 MeV)

thermal atmospheric neutrons.

direct protons (35-70 MeV)
Contact Person:
Prof. Jeffery Wyss
Univ of Cassino and INFN
Padova
[email protected]
Tel: +39 345 3163072
Tools at LNL…
AVAILABLE BEAMS
1.
39
Quasi Mono-energetic Neutrons (QMN) from 35-70 MeV protons


Assortment of thin (3-4mm) Li and Be targets
Multi-angle collimator for «tail correction»
2.Continuous
energy
(white)
atmosphericlike neutrons from
intense
70
MeV
protons. Two targets:
MCNPX (LNL)
at 750 nA current
 A «novel» rotating
BePb
(or
BeTa)
composite
target
system
(nonstopping)
and
without moderator
 A «conventionl» thick
(stopping)
W-based
target and moderator
system
3.
Direct protons (3570 MeV)
Neutron beam shaped by
composite target
Conclusions
SIRAD is an unique irradiation facility in Italy:
o
o
o
o
o
o
continuous upgrades have made the facility user friendly for external users to operate
it with minimal support
beam dosimetry validated by measurements with the ESA SEU monitor
insertion of more energetic Tandem-ALPI ion beams allows for new class of
applications
micromapping of SEE sensitivity with IEE Microscopy allows for detailed studies of
electronic devices
availability of the Panoramic Co60 Gammabeam source and X-ray gun for TID
tests;
The SPES project will open soon the possibility of higher energy proton beams and of
neutron beams
Accessibility of the SIRAD apparatus can be further increased:
o with dedicated beam time slots;
o by making Tandem and ALPI-PIAVE complexes running independently to
increase the beam time availability
o by defining protocols for allowing industrial groups to come and pay for beam and
support.
This is an ambitious program for the SIRAD group.
Help from other groups is welcome.