BF998...

BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
BDTIC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF998
SOT143
1=S
2=D
3=G2
4=G1
-
-
MOs
BF998R
SOT143R
1=D
2=S
3=G1
4=G2
-
-
MRs
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
12
V
Continuous drain current
ID
30
mA
Gate 1/ gate 2-source current
±IG1/2SM
10
Total power dissipation
Ptot
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
Value
Unit
TS ≤ 76 °C, BF998, BF998R
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point2), BF998, BF998R
Rthchs
≤ 370
K/W
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
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2007-04-20
BF998...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
±V (BR)G1SS
8
-
12
±V (BR)G2SS
8
-
12
±IG1SS
-
-
50
nA
±IG2SS
-
-
50
nA
IDSS
5
9
15
mA
-VG1S(p)
-
0.8
2.5
V
-VG2S(p)
-
0.8
2
DC Characteristics
Drain-source breakdown voltage
V
ID = 10 µA, VG1S = -4 V, VG2S = -4 V
Gate 1 source breakdown voltage
±IG2S = 10 mA, VG2S = VDS = 0
Gate2 source breakdown voltage
BDTIC
±IG2S = 10 mA, VG2S = VDS = 0
Gate 1 source leakage current
±V G1S = 5 V, VG2S = VDS = 0
Gate 2 source leakage current
±V G2S = 5 V, VG2S = VDS = 0
Drain current
VDS = 8 V, VG1S = 0 , VG2S = 4 V
Gate 1 source pinch-off voltage
VDS = 8 V, VG2S = 4 V, ID = 20 µA
Gate 2 source pinch-off voltage
VDS = 8 V, VG1S = 0 , ID = 20 µA
2
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2007-04-20
BF998...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
AC Characteristics
Unit
min.
typ.
max.
20
24
-
Cg1ss
-
2.1
2.5
pF
Cg2ss
-
1.2
-
pF
Cdg1
-
25
-
fF
Cdss
-
1.1
-
pF
(verified by random sampling)
Forward transconductance
gfs
-
VDS = 8 V, I D = 10 mA, VG2S = 4 V
Gate1 input capacitance
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 10 MHz
Gate 2 input capacitance
BDTIC
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 10 MHz
Feedback capacitance
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 10 MHz
Output capacitance
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 10 MHz
Power gain
Gp
dB
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 45 MHz
-
28
-
-
20
-
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
Noise figure
dB
F
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 45 MHz
-
2.8
-
-
1.8
-
40
50
-
VDS = 8 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
∆G p
Gain control range
VDS = 8 V, V G2S = 4 ...-2 V, f = 800 MHz
3
www.BDTIC.com/infineon
2007-04-20
BF998...
Total power dissipation Ptot = ƒ(TS)
BF998, BF998R
Output characteristics ID = ƒ(V DS)
VG2S = 4 V
VG1S = Parameter
26
mA
220
mW
0.4V
22
180
20
0.2V
18
140
ID
P tot
160
16
0V
120
14
100
12
BDTIC
-0.2V
10
80
8
60
-0.4V
6
40
4
20
0
0
2
15
30
45
60
75
90 105 120 °C
0
0
150
2
4
6
8
V
10
TS
Gate 1 forward transconductance
Gate 1 forward transconductance
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
g fs1 = ƒ (VG1S)
26
mS
26
mS
4V
4V
22
22
20
20
2V
16
14
16
14
1V
12
12
10
10
8
8
6
6
4
4
0
0
2V
18
Gfs
gfs
18
2
14
VDS
0V
1V
0V
2
4
8
12
16
mA
0
-1
24
-0.75
-0.5
-0.25
ID
0
0.25
V
0.75
VG1S
4
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2007-04-20
BF998...
Drain current ID = ƒ(VG1S)
Power gain Gps = ƒ (VG2S)
VDS = 5V
f = 45 MHz
VG2S = Parameter
30
30
4V
2V
dB
20
G ps
mA
ID
1V
20
BDTIC
15
15
10
10
0V
5
0
-1
5
-0.75 -0.5 -0.25
0
0.25
0.5
V
0
0
1
1
2
V
VG1S
4
VG2S
Noise figure F = ƒ (VG2S)
Noise figure F = ƒ (VG2S)
f = 45 MHz
f = 800 MHz
10
5
dB
dB
8
6
F
F
7
3
5
4
2
3
2
1
1
0
0
1
2
V
0
0
4
1
2
VG2S
V
4
VG2S
5
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2007-04-20
BF998...
Power gain Gps = ƒ (VG2S)
Gate 1 input capacitance Cg1ss = ƒ (VG1S)
f = 800 MHz
20
2.6
pF
dB
Cg1ss
G ps
2.2
10
2
BDTIC
5
1.8
1.6
0
1.4
-5
1.2
-10
0
1
V
2
1
-3
4
-2.6
-2.2
-1.8
-1.4
VG2S
-1
-0.6
V
0.2
VG1S
Output capacitance C dss = ƒ(VDS)
4
pF
Cdss
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
V
12
VDS
6
www.BDTIC.com/infineon
2007-04-20
Package SOT143
BF998...
2
0.1 MAX.
10˚ MAX.
1
1 ±0.1
0.2
0.8 +0.1
-0.05
0.4 +0.1
-0.05
A
5
0...8˚
0.2 M A
0.25 M B
1.7
0.08...0.1
1.3 ±0.1
3
2.4 ±0.15
4
B
10˚ MAX.
2.9 ±0.1
1.9
0.15 MIN.
Package Outline
BDTIC
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8 1.2 0.8
0.8
Marking Layout (Example)
RF s
56
Manufacturer
Pin 1
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
7
www.BDTIC.com/infineon
2007-04-20
Package SOT143R
BF998...
Package Outline
2
0.2
0.08...0.15
A
+0.1
0.8 -0.05
0.4 +0.1
-0.05
0˚... 8˚
1.7
0.25
10˚ MAX.
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1.9
4
1 ±0.1
0.15 MIN.
2.9 ±0.1
M
0.2
M
A
B
BDTIC
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8
0.8
0.8
1.2
Marking Layout (Example)
Reverse bar
2005, June
Date code (YM)
Pin 1
Manufacturer
BFP181R
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
8
www.BDTIC.com/infineon
2007-04-20
BF998...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
9
www.BDTIC.com/infineon
2007-04-20