Opti MOS -P Power-Transistor BSC200P03LS G

BSC200P03LS G
OptiMOS®-P Power-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
VDS
-30
V
RDS(on),max
20
mW
ID
-12.5
A
• Logic level
• 150°C operating temperature
• Avalanche rated
PG-TDSON-8
• Vgs=25V, specially suited for notebook applications
BDTIC
• Halogen-free according to IEC61249-2-21
• Pb-free Lead plating: RoHS compliant
Type
Package
Marking
Lead free
Packing
BSC200P03LS G
PG-TDSON-8
200P03LS
Yes
Dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
T C=25 °C
-12,5
A
T C=70 °C
-12,5
T A=25 °C1)
-9,9
Pulsed drain current
I D,pulse
T C=25 °C2)
-50
Avalanche energy, single pulse
E AS
I D=-12.5 A, R GS=25 W
98
mJ
Gate source voltage
V GS
±25
V
Power dissipation
P tot
T C=25 °C
63
W
T A=25 °C1)
2,5
Operating and storage temperature
ESD class
T j, T stg
-55 ... 150
JESD22-A114-HBM
1B (500V-1kV)
260 °C
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
Rev. 1.04
°C
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page 1
2011-09-05
BSC200P03LS G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2
-
-
50
Thermal characteristics
Thermal resistance,
junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area1)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
BDTIC
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250mA
-30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-100 µA
-2,2
-1,5
-1
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-0,1
-1
V DS=-30 V, V GS=0 V,
T j=125 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-25 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10 V,
I D=-12.5 A
-
17,1
20
mW
Gate resistance
RG
-
3,9
-
W
Transconductance
g fs
12
23
-
S
|V DS|>2|I D|R DS(on)max,
I D=-12.5 A
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Figure 3.
Rev. 1.04
www.BDTIC.com/infineon
page 2
2011-09-05
BSC200P03LS G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1830
2430
-
569
757
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
460
690
Turn-on delay time
t d(on)
-
9
14
Rise time
tr
-
33
49
Turn-off delay time
t d(off)
-
34
51
Fall time
tf
-
18
27
Gate to source charge
Q gs
-
-4,8
-6,5
Gate charge at threshold
Q g(th)
-
-2,6
-3,5
Gate to drain charge
Q gd
-
-13,6
-20,4
Switching charge
Q sw
-
-15,8
-23,3
Gate charge total
Qg
-
-36,4
-48,5
Gate plateau voltage
V plateau
-
-2,6
-
Output charge
Q oss
-
10,2
13,5
-
-
-12,5
-
-
-50
V GS=0 V, V DS=-15 V,
f =1 MHz
V DD=-15 V, V GS=10 V, I D=-10 A,
R G=6 W
pF
ns
BDTIC
Gate Charge Characteristics3)
V DD=-24 V,
I D=-12.5 A, V GS=0 to 10 V
V DD=-15 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
A
T C=25 °C
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=-12.5 A,
T j=25 °C
-
-0,9
-1,2
V
Reverse recovery time
t rr
V R=15 V, I F=|I S|,
di F/dt =100 A/µs
-
22
-
ns
Reverse recovery charge
Q rr
-
11
-
nC
Rev. 1.04
www.BDTIC.com/infineon
page 3
2011-09-05
BSC200P03LS G
1 Power dissipation
2 Drain current
P tot=f(T C); t p≤10 s
I D=f(T C); |V GS|≥10 V; t p≤10 s
70
15
60
50
40
-ID [A]
Ptot [W]
10
BDTIC
30
5
20
10
0
0
0
40
80
120
160
0
40
TC [°C]
80
120
160
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
102
101
10 µs
100 µs
0.5
0.2
ZthJS [K/W]
-ID [A]
100
101
1 ms
0.1
0.05
10-1
10 ms
limited by on-state
resistance
single pulse
DC
100
10-2
10-1
100
101
102
-VDS [V]
Rev. 1.04
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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page 4
2011-09-05
BSC200P03LS G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
40
70
-10 V
-4.5 V
-3 V
-2.7 V
-3.2 V
-3.5 V
65
35
60
30
55
-3.5 V
50
RDS(on) [mW]
25
45
-ID [A]
BDTIC
20
-3.2 V
15
-3 V
40
35
30
-4.5 V
10
25
-2.7 V
20
5
-10 V
15
-2.3 V
0
10
0
1
2
3
0
10
20
-VDS [V]
30
40
-ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
50
40
25 °C
40
30
150 °C
gfs [S]
-ID [A]
30
20
20
10
10
0
0
0
1
2
3
4
-VGS [V]
Rev. 1.04
0
10
20
30
-ID [A]
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page 5
2011-09-05
BSC200P03LS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-12.5 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-100 mA
3
28
2,5
24
max
max.
2
typ
-VGS(th) [V]
RDS(on) [mW]
20
16
BDTIC
12
1,5
min.
1
8
0,5
4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
Tj [°C]
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
10000
25 °C, typ
10
103
IF [A]
C [pF]
Ciss
1000
150°C, typ
Coss
1
Crss
150 °C, 98%
25°C, 98%
102
0,1
100
0
10
20
30
-VDS [V]
Rev. 1.04
0
0,5
1
1,5
-VSD [V]
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page 6
2011-09-05
BSC200P03LS G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=-12.5 A pulsed
parameter: T j(start)
parameter: V DD
102
10
-15 V
9
-6 V
8
-24 V
7
-VGS [V]
-IAV [A]
6
BDTIC
25 °C
101
100 °C
5
4
125 °C
3
2
1
100
0
100
101
102
103
0
10
tAV [µs]
20
30
40
-Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 mA
36
V GS
34
Qg
32
-VBR(DSS) [V]
30
28
V gs(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 1.04
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page 7
2011-09-05
BSC200P03LS G
Package Outline
PG-TDSON-8: Outline
BDTIC
Rev. 1.04
www.BDTIC.com/infineon
page 8
2011-09-05
BSC200P03LS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.04
www.BDTIC.com/infineon
page 9
2011-09-05