BDTIC BSO 615 C SIPMOS Small-Signal-Transistor

Rev. 2.1
BSO 615 C G
SIPMOS  Small-Signal-Transistor
Features
Product Summary
· Dual N- and P -Channel
Drain source voltage
VDS
·
Drain-Source on-state
Enhancement mode
· Logic Level
resistance
· Avalanche rated
Continuous drain current
N
P
60
-60
V
RDS(on)
0.11
0.3
W
ID
3.1
-2
A
· Pb-free lead plating; RoHS compliant
BDTIC
Type
Package
Marking
BSO 615 C
PG-DSO-8
615C
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
N
Unit
P
ID
Continuous drain current
A
T A = 25 °C
3.1
-2
T A = 70 °C
2.5
-1.6
12.4
-8
I D puls
Pulsed drain current
T A = 25 °C
EAS
Avalanche energy, single pulse
I D = 3.1 A , VDD = 25 V, R GS = 25 W
I D = -2 A , VDD = -25 V, RGS = 25 W
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, T jmax = 150 °C
EAR
mJ
47
-
-
70
0.2
0.2
dv/dt
kV/µs
I S = 3.1 A, V DS = 48 V, di/dt = 200 A/µs
6
-
I S = -2 A, V DS = -48 V, di/dt = -200 A/µs
-
6
Gate source voltage
VGS
±20
±20
V
Power dissipation
Ptot
2
2
W
T A = 25 °C
T j , Tstg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55...+150
°C
55/150/56
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Page 1
2012-04-04
Rev. 2.1
BSO 615 C G
Termal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
40
-
-
40
-
-
100
Dynamic Characteristics
Thermal resistance, junction - soldering point
( Pin 4)
N RthJS
P
RthJA
SMD version, device on PCB:
@ min. footprint; t
£
K/W
10 sec.
N
BDTIC
@ 6 cm 2 cooling area 1) ; t £ 10 sec.
N
-
-
62.5
@ min. footprint; t
P
-
-
110
P
-
-
62.5
£
10 sec.
@ 6 cm 2 cooling area 1) ; t £ 10 sec.
Static Characteristics, at Tj = 25 °C, unless otherwise specified
V(BR)DSS
Drain- source breakdown voltage
V
VGS = 0 V, ID = 250 µA
N
60
-
-
VGS = 0 V, ID = -250 µA
P
-60
-
-
Gate threshold voltage, VGS = VDS
ID = 20 µA
VGS(th)
N
1.2
1.6
2.0
ID = -450 µA
P
-1
-1.5
-2.0
IDSS
Zero gate voltage drain current
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C
N
-
0.1
1
VDS = 60 V, VGS = 0 V, Tj = 125 °C
N
-
10
100
VDS = -60 V, VGS = 0 V, Tj = 25 °C
P
-
-0.1
-1
VDS = -60 V, VGS = 0 V, Tj = 125 °C
P
-
-10
-100
IGSS
Gate-source leakage current
nA
VGS = 20 V, VDS = 0 V
N
-
10
100
VGS = -20 V, VDS = 0 V
P
-
-10
-100
RDS(on)
Drain-source on-state resistance
W
VGS = 4.5 V, ID = 2.7 A
N
-
0.1
0.15
VGS = -4.5 V, ID = -1.7 A
P
-
0.27
0.45
RDS(on)
Drain-source on-state resistance
VGS = 10 V, ID = 3.1 A
N
-
0.07
0.11
VGS = -10 V , ID = -2 A
P
-
0.19
0.3
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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Page 2
2012-04-04
Rev. 2.1
BSO 615 C G
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
gfs
Transconductance
S
VDS³2 * I D * R DS(on)max, ID = 2.7 A
N
2.25
5.5
-
VVDS³2 * I D * R DS(on)max, ID = -1.7 A
P
1.2
2.4
-
Ciss
Input capacitance
pF
BDTIC
VGS = 0 V, V DS = 25 V, f = 1 MHz
N
-
300
380
VGS = 0 V, V DS = -25 V, f = 1 MHz
P
-
365
460
Coss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
N
-
90
120
VGS = 0 V, V DS = -25 V, f = 1 MHz
P
-
105
135
Crss
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
N
-
50
65
VGS = 0 V, V DS = -25 V, f = 1 MHz
P
-
40
50
td(on)
Turn-on delay time
ns
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W
N
-
16
24
VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 W
P
-
24
36
tr
Rise time
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W
N
-
75
115
VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 W
P
-
105
160
td(off)
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W
N
-
25
40
VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 W
P
-
125
190
tf
Fall time
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W
N
-
18
27
VDD = -30 V, V GS = -4.5 V, I D = -1.7 , R G = 13 W
P
-
90
135
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Page 3
2012-04-04
Rev. 2.1
BSO 615 C G
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
Q gs
Gate to source charge
nC
VDD = 48 V, ID = 3.1 A
N
-
0.5
0.75
VDD = -48 V, ID = -2 A
P
-
1.7
2.6
Q gd
Gate to drain charge
BDTIC
VDD = 48 V, ID = 3.1 A
N
-
6.3
9.5
VDD = -48 V, ID = -2 A
P
-
4.3
6.5
Qg
Gate charge total
VDD = 48 V, ID = 3.1 A, VGS = 0 to 10V
N
-
15
22.5
VDD = -48 V, ID = -2 A, VGS = 0 to -10V
P
-
13.5
20
V(plateau)
Gate plateau voltage
V
VDD = 48 V, ID = 3.1 A
N
-
3.1
-
VDD = -48 V, ID = -2 A
P
-
-2.8
-
Inverse diode continuous forward current
N IS
-
-
3.1
T A = 25 °C
P
-
-
-2
Inverse diode direct current,pulsed
N ISM
-
-
12.4
T A = 25 °C
P
-
-
-8
Reverse Diode
VSD
Inverse diode forward voltage
V
VGS = 0 V, I F = I S
N
-
0.8
1.1
VGS = 0 V, I F = I S
P
-
-0.8
-1.1
trr
Reverse recovery time
ns
VR = 30 V, IF=l S, di F/dt = 100 A/µs
N
-
50
75
VR = -30 V, IF=l S , diF/dt = -100 A/µs
P
-
85
130
Qrr
Reverse recovery charge
nC
VR = 30 V, IF=l S , diF/dt = 100 A/µs
N
-
70
105
VR = -30 V, I F=lS, diF/dt = -100 A/µs
P
-
120
180
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Page 4
A
2012-04-04
Rev. 2.1
BSO 615 C G
Power Dissipation (N-Ch.)
Power Dissipation (P-Ch.)
Ptot = f (TA)
Ptot = f (TA )
BSO 615 C
BSO 615 C
2.2
2.2
W
1.8
1.8
1.6
1.6
Ptot
Ptot
W
1.4
1.4
BDTIC
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0
20
40
60
80
100
120
°C
0.0
0
160
20
40
60
80
100
120
TA
160
TA
Drain current (N-Ch.)
Drain current (P-Ch.)
I D = f (T A)
ID = f (TA)
parameter: VGS³ 10 V
parameter: VGS ³ -10 V
BSO 615 C
BSO 615 C
3.4
-2.2
A
A
2.8
-1.8
-1.6
ID
2.4
ID
°C
2.0
-1.4
-1.2
1.6
-1.0
1.2
-0.8
-0.6
0.8
-0.4
0.4
0.0
0
-0.2
20
40
60
80
100
120
°C
0.0
0
160
20
40
60
80
TA
100
120
°C
160
TA
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Page 5
2012-04-04
Rev. 2.1
BSO 615 C G
Safe operating area (N-Ch.)
Safe operating area (P-Ch.)
I D = f ( VDS )
ID = f ( VDS )
parameter : D = 0 , T A = 25 °C
parameter : D = 0 , TA = 25 °C
10 2
BSO 615 C
-10 1
BSO 615 C
tp = 90.0µs
100 µs
/I
D
A
S(
on
V
=
1 ms
on
)
S
10 µs
)
-10 0
ID
ID
RD
VD
DS
(
=
R
10 1
DS
A
tp = 4.7µs
/I D
BDTIC
100 µs
10 ms
1 ms
10 0
10 ms
-10 -1
10 -1
DC
DC
10 -2 -1
10
10
0
10
1
V
10
-10 -2 -1
-10
2
-10
0
-10
1
V
VDS
-10
VDS
Transient thermal impedance (N-Ch.)
Transient thermal impedance (P-Ch.)
Z thJC = f(t p)
ZthJC = f(tp)
parameter : D = tp/T
parameter : D = tp /T
10
2
2
BSO 615 C
10 2
BSO 615 C
K/W
K/W
Z thJC
Z thJC
10 1
10 1
10 0
10
D = 0.50
D = 0.50
0.20
0.20
0.10
0.10
0
0.05
single pulse
10 -1 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
1
10 -1
0.05
single pulse
0.02
0.02
0.01
0.01
s
10
10 -2 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
3
tp
10
1
s
10
3
tp
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Page 6
2012-04-04
Rev. 2.1
BSO 615 C G
Typ. output characteristics (N-Ch.)
Typ. output characteristics (P-Ch.)
I D = f (VDS)
ID = f (VDS )
parameter: tp = 80 µs
parameter: tp = 80 µs
BSO 615 C
7.5
BSO 615 C
-5.0
Ptot = 2.00W
A
A
VGS [V]
a
2.5
6.0
5.5
e
5.0
b
2.7
c
3.0
d
3.2
e
3.5
g
f
VGS [V]
a
-2.5
e
-4.0
b
-2.7
c
-3.0
d
-3.2
e
-3.5
d f
-3.7
g
-4.0
-3.5
ID
g f
ID
Ptot = 2.00W
BDTIC
4.5
f
3.7
4.0
g
4.0
-3.0
-2.5
3.5
c
d
-2.0
3.0
2.5
-1.5
c
2.0
b
-1.0
1.5
a
1.0
b
0.5
-0.5
a
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
5.0
VDS
-5.0
VDS
Typ. drain-source-on-resistance (N-Ch.)
Typ. drain-source-on-resistance (P-Ch.)
RDS(on) = f (ID)
RDS(on) = f (ID )
parameter: VGS
parameter: VGS
BSO 615 C
BSO 615 C
1.0
0.36
W
c
d
W
e
b
c
d
0.8
RDS(on)
0.28
RDS(on)
a
0.24
0.7
0.6
0.20
0.5
0.16
0.4
0.12
0.08
0.04
g
0.00
0.0
d
3.2
e
f
3.5 3.7
1.0
2.0
0.1
g
4.0
3.0
4.0
5.0
A
f
g
0.2
VGS [V] =
c
3.0
e
0.3
f
VGS [V] =
0.0
0.0
6.5
a
b
c
d
e
f
-2.5 -2.7 -3.0 -3.2 -3.5 -3.7
-0.4 -0.8
g
-4.0
-1.2 -1.6 -2.0
ID
-2.4 -2.8 °C -3.4
Tj
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Page 7
2012-04-04
Rev. 2.1
BSO 615 C G
Typ. transfer characteristics (N-Ch.)
Typ. transfer characteristics (P-Ch.)
parameter: tp = 80 µs
I D = f (VGS), V DS ³ 2 x I D x R DS(on)max
parameter: tp = 80 µs
ID = f (VGS ), VDS ³ 2 x ID x RDS(on)max
-5.0
7.0
A
A
6.0
-4.0
5.5
-3.5
4.5
ID
ID
5.0
BDTIC
-3.0
4.0
-2.5
3.5
3.0
-2.0
2.5
2.0
-1.5
1.5
-1.0
1.0
-0.5
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS 5.0
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0VGS -5.0
V
V
Typ. forward transconductance (N-Ch.)
Typ. forward transconductance (P-Ch.)
gfs = f(ID); T j = 25 °C
gfs = f(ID); Tj = 25 °C
parameter: g fs
parameter: gfs
10.0
4.0
S
S
8.0
3.0
gfs
gfs
7.0
6.0
5.0
2.5
2.0
4.0
1.5
3.0
1.0
2.0
0.5
1.0
0.0
0
1
2
3
4
5
6
7
8
0.0
0.0
A 10
ID
-1.0
-2.0
-3.0
-4.0
-6.0
A
ID
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Page 8
2012-04-04
Rev. 2.1
BSO 615 C G
Drain-source on-resistance (N-Ch.)
Drain-source on-resistance (P-Ch.)
RDS(on) = f (Tj)
RDS(on) = f (Tj)
parameter : I D = 3.1 A , VGS = 10 V
parameter : ID = -2 A , VGS = -10 V
BSO 615 C
BSO 615 C
0.80
0.30
W
W
RDS(on)
RDS(on)
0.24
0.22
0.20
0.60
0.50
BDTIC
0.18
0.16
0.40
98%
0.14
0.12
98%
0.30
0.10
typ
typ
0.08
0.20
0.06
0.04
0.10
0.02
0.00
-60
-20
20
60
100
°C
0.00
-60
180
-20
20
60
°C
100
Tj
Tj
Gate threshold voltage (P-Ch.)
VGS(th) = f (T j)
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 20 µA
parameter: VGS = VDS , ID = -450 µA
3.0
-3.0
V
V
2.5
-2.5
2.2
-2.2
V GS(th)
V GS(th)
Gate threshold voltage (N-Ch.)
98%
2.0
1.8
98%
-2.0
-1.8
typ
typ
1.5
-1.5
1.2
-1.2
2%
1.0
-1.0
0.8
-0.8
0.5
-0.5
0.2
-0.2
0.0
-60
180
-20
20
60
100
0.0
-60
160
°C
Tj
2%
-20
20
60
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Page 9
100
160
°C
Tj
2012-04-04
Rev. 2.1
BSO 615 C G
Typ. capacitances (N-Ch.)
Typ. capacitances (P-Ch.)
C = f(VDS)
C = f(VDS )
parameter: VGS=0 V, f=1 MHz
parameter: VGS =0 V, f=1 MHz
10 3
10 3
pF
Ciss
pF
Ciss
C
C
BDTIC
10 2
10 2
Coss
Coss
Crss
Crss
10 1
0
5
10
15
20
25
VDS
10 1
0
35
-5
-10
-15
-20
-25
V
VDS
-35
V
Forward characteristics of reverse diode
Forward characteristics of reverse diode
I F = f (VSD), (N-Ch.)
IF = f (VSD ), (P-Ch.)
parameter: Tj , tp = 80 µs
parameter: Tj , tp = 80 µs
10
1
BSO 615 C
10 1
BSO 615 C
A
A
IF
10 0
IF
10 0
10 -1
10 -2
0.0
10 -1
0.4
0.8
Tj = 25 °C typ
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 25 °C (98%)
Tj = 150 °C (98%)
Tj = 150 °C (98%)
1.2
1.6
2.0
2.4 V
10 -2
0.0
3.0
-0.4
-0.8
-1.2
-1.6
VSD
-2.0
-2.4 V
-3.0
VSD
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Page 10
2012-04-04
Rev. 2.1
BSO 615 C G
Avalanche Energy EAS = f (Tj) (N-Ch.)
Avalanche Energy EAS = f (Tj )
parameter: ID = 3.1 A , V DD = 25 V
RGS = 25 W
parameter: ID = -2 A , VDD = -25 V
RGS = 25 W
50
80
mJ
mJ
40
60
E AS
E AS
35
50
BDTIC
30
25
40
20
30
15
20
10
10
5
0
25
45
65
85
105
125
0
25
165
°C
45
65
85
105
125
Tj
Tj
Typ. gate charge (N-Ch.)
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = 3.1 A
VGS = f (QGate)
parameter: ID = -2 A
BSO 615 C
BSO 615 C
16
-16
V
V
-12
VGS
12
VGS
165
°C
10
8
-10
-8
0,2 VDS max
6
0,8 VDS max
4
-4
2
-2
0
0
2
4
6
8
10
12
14
16 nC
0,2 VDS max
-6
0
0
20
2
4
6
8
0,8 VDS max
10
QGate
12
14
16 nC
20
QGate
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Page 11
2012-04-04
Rev. 2.1
BSO 615 C G
Drain-source breakdown voltage
Drain-source breakdown voltage
V(BR)DSS = f (Tj), (N-Ch.)
V(BR)DSS = f (Tj ), (P-Ch.)
BSO 615 C
BSO 615 C
72
-72
V
68
V(BR)DSS
V(BR)DSS
V
66
-68
-66
BDTIC
64
-64
62
-62
60
-60
58
-58
56
-56
54
-60
-20
20
60
100
°C
-54
-60
180
-20
20
60
Tj
100
°C
180
Tj
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Page 12
2012-04-04
Rev. 2.1
BSO 615 C G
BDTIC
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
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Page 13
2012-04-04