• BSP89 SIPMOS Small-Signal-Transistor

BSP89
Rev. 2.2
SIPMOS Ò Small-Signal-Transistor
Feature
Product Summary
· N-Channel
VDS
RDS(on)
· Enhancement mode
ID
· Logic Level
240
V
6
W
0.35
A
PG-SOT223
· dv/dt rated
• Pb-free lead plating; RoHS compliant
rated
4.5V
lead
plating; RoHS compliant
• ee
4
BDTIC
x Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
1
Type
Package
Tape and Reel Information
Marking
Packaging
BSP89
PG-SOT223
H6327: 1000 pcs/reel
BSP89
Non dry
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Continuous drain current
Value
VPS05163
Unit
A
ID
TA=25°C
0.35
TA=70°C
0.28
Pulsed drain current
ID puls
1.4
dv/dt
6
VGS
±20
TA=25°C
Reverse diode dv/dt
kV/µs
IS=0.35A, V DS=192V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD class (JESD22-A114-HBM)
V
1A (>250V, <500V)
Power dissipation
Ptot
1.8
W
-55... +150
°C
TA=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
3
2
www.BDTIC.com/infineon
2012-11-29
BSP89
Rev. 2.2
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
25
-
-
115
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 4)
SMD version, device on PCB:
RthJA
@ min. footprint
BDTIC
@ 6 cm2 cooling area 1)
-
-
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
240
-
-
VGS(th)
0.8
1.4
1.8
Static Characteristics
Drain-source breakdown voltage
V
V GS=0, ID=250µA
Gate threshold voltage, VGS = VDS
ID=108µA
Zero gate voltage drain current
µA
IDSS
V DS=240V, VGS=0, Tj=25°C
-
-
0.1
V DS=240V, VGS=0, Tj=150°C
-
-
10
IGSS
-
-
10
nA
RDS(on)
-
4.9
7.5
W
RDS(on)
-
4.2
6
Gate-source leakage current
V GS=20V, VDS=0
Drain-source on-state resistance
V GS=4.5V, ID=0.32A
Drain-source on-state resistance
V GS=10V, ID=0.35A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
www.BDTIC.com/infineon
2012-11-29
BSP89
Rev. 2.2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.18
0.36
-
S
pF
Dynamic Characteristics
Transconductance
g fs
V DS³2*I D*RDS(on)max,
ID=0.28A
Input capacitance
Ciss
V GS=0, VDS=25V,
-
80
140
Output capacitance
Coss
f=1MHz
-
11.2
16.8
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
Fall time
BDTIC
-
5.2
7.8
V DD=120V, V GS=10V,
-
4
6
ID=0.35A, R G=6W
-
3.5
5.3
td(off)
-
15.9
23.8
tf
-
18.4
27.6
-
0.2
0.3
-
2
3
-
4.3
6.4
V(plateau) V DD=192V, ID = 0.35 A
-
3.1
-
V
IS
-
-
0.35
A
-
-
1.4
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
V DD=192V, ID=0.35A
V DD=192V, ID=0.35A,
nC
V GS=0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
V GS=0, IF = IS
-
0.85
1.2
V
Reverse recovery time
trr
V R=120V, IF=lS,
-
67
100
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
123
184
nC
Page 3
www.BDTIC.com/infineon
2012-11-29
BSP89
Rev. 2.2
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA)
parameter: V GS³ 10 V
1.9
BSP89
0.38
A
1.6
0.32
1.4
0.28
1.2
0.24
ID
Ptot
W
BSP89
BDTIC
1
0.2
0.8
0.16
0.6
0.12
0.4
0.08
0.2
0.04
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
°C
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( V DS )
ZthJA = f (tp)
parameter : D = 0 , TA = 25 °C
parameter : D = t p/T
10
160
TA
1 BSP89
10 2
A
BSP89
K/W
tp = 160.0µs
/ID
RD
o
S(
n)
=
VD
10 1
S
ZthJA
ID
10 0
1 ms
10 ms
10 -1
10 0
D = 0.50
0.20
0.10
10 -2
10 -1
0.05
single pulse
0.02
DC
0.01
10 -3 0
10
10
1
10
2
V
10
3
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
VDS
s
10
tp
Page 4
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2012­11-29
4
BSP89
Rev. 2.2
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
parameter: Tj = 25 °C, VGS
9
0.6
W
A
RDS(on)
7
ID
0.4
6
BDTIC
5
0.3
4
3V
3.4V
3.6V
4.2V
4.6V
5V
6V
10V
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
3V
3.4V
3.6V
4.2V
4.6V
5V
6V
10V
3
2
1
V
VDS
0
0
5
0.1
0.2
0.3
0.4
ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
g fs = f(ID)
parameter: Tj = 25 °C
parameter: Tj = 25 °C
0.6
A
S
0.4
0.4
ID
g fs
0.6
0.3
0.3
0.2
0.2
0.1
0.1
0
0
0.5
1
1.5
2
2.5
V
0.6
A
3.5
0
0
0.1
0.2
0.3
VGS
0.4
0.6
A
ID
Page 5
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2012-11-29
BSP89
Rev. 2.2
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : ID = 0.35 A, VGS = 10 V
parameter: V GS = VDS; ID =108µA
30
BSP89
2.2
W
V
VGS(th)
24
RDS(on)
98%
1.8
22
20
1.6
typ.
1.4
BDTIC
18
16
1.2
14
1
12
8
0.6
98%
6
0.4
typ
4
0.2
2
0
-60
2%
0.8
10
-20
20
60
100
°C
0
-60
180
-20
20
60
100
°C
160
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: V GS=0, f=1 MHz, Tj = 25 °C
parameter: Tj
10
3
10 1
BSP89
A
pF
Ciss
10 0
C
IF
10 2
Coss
10 1
10 -1
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
5
10
15
20
V
30
10 -2
0
0.4
0.8
1.2
1.6
VDS
2
2.4 V
3
VSD
Page 6
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2012-11-29
BSP89
Rev. 2.2
13 Typ. gate charge
14 Drain-source breakdown voltage
VGS = f (QG ); parameter: VDS ,
ID = 0.35 A pulsed, Tj = 25 °C
V(BR)DSS = f (Tj)
16
BSP89
291
BSP89
V
V(BR)DSS
V
VGS
12
10
276
271
266
BDTIC
261
0.2 VDS max
256
0.5 VDS max
251
6 0.8 VDS max
246
8
241
236
4
231
226
2
221
0
0
1
2
3
4
5
nC
6.5
216
-60
-20
20
60
QG
100
°C
180
Tj
Page 7
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2012-11-29
Rev. 2.2
BSP89
BDTIC
Page 8
www.BDTIC.com/infineon
2012-11-29