BSP372 •

BSP372
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = 0.8 ...2.0 V
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
BDTIC
Type
VDS
ID
RDS(on)
BSP372
100 V
1.7 A
0.31 Ω
Type
BSP372
Package
PG-SOT223
Tape and Reel Information
L6327: 1000 pcs/reel
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Marking
BSP372
Packaging
Non dry
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TA = 28 ˚C
Values
Unit
A
1.7
DC drain current, pulsed
IDpuls
TA = 25 ˚C
6.8
Avalanche energy, single pulse
mJ
EAS
ID = 1.7 A, VDD = 25 V, RGS = 25 Ω
L = 23.3 mH, Tj = 25 ˚C
45
Gate source voltage
VGS
± 14
Gate-source peak voltage,aperiodic
Vgs
± 20
Power dissipation
Ptot
TA = 25 ˚C
Rev 2.0
V
W
1.8
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1
2008-03-31
BSP372
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 70
Thermal resistance, junction-soldering point 1)
RthJS
≤ 10
Values
IEC climatic category, DIN IEC 68-1
Unit
˚C
K/W
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
BDTIC
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C
Gate threshold voltage
100
-
-
0.8
1.4
2
V GS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
VDS = 100 V, V GS = 0 V, Tj = 25 ˚C
-
0.1
1
VDS = 100 V, V GS = 0 V, Tj = 125 ˚C
-
10
100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
10
100
Ω
RDS(on)
VGS = 5 V, ID = 1.7 A
Rev 2.0
nA
IGSS
-
2
0.24
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0.31
2008-03-31
BSP372
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
S
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A
Input capacitance
2
3.7
pF
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
-
415
520
-
80
100
-
50
65
BDTIC
Output capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
td(on)
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RG = 50 Ω
Rise time
-
20
30
-
35
55
-
110
165
-
50
75
tr
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RG = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RG = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 5 V, ID = 0.3 A
RG = 50 Ω
Rev 2.0
3
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2008-03-31
BSP372
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
A
IS
TA = 25 ˚C
-
Inverse diode direct current,pulsed
-
1.7
ISM
BDTIC
TA = 25 ˚C
-
Inverse diode forward voltage
0.85
1.1
ns
trr
-
65
-
µC
Qrr
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Rev 2.0
V
-
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
6.8
V SD
VGS = 0 V, IF = 1.7 A
Reverse recovery time
-
-
4
0.11
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-
2008-03-31
BSP372
Power dissipation
Ptot = ƒ(TA)
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 5 V
2.0
1.8
W
Ptot
A
1.6
ID
1.4
1.4
1.2
1.2
BDTIC
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
20
40
60
80
100
120
˚C
160
0
20
40
60
80
100
TA
120
˚C
160
TA
Safe operating area ID=f(VDS)
Transient thermal impedance
Zth JA = ƒ(tp )
parameter: D = tp / T
parameter : D = 0, TC=25˚C
10 2
K/W
10 1
ZthJA
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
single pulse
10
-4
0.02
0.01
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
tp
Rev 2.0
5
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2008-03-31
BSP372
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
3.8
A
k
lj
h
Ptot = 2W
g
i fe d
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 ˚C
1.0
c
Ω
3.2
VGS [V]
a
2.0
ID
2.8
2.4
b
2.5
c
3.0
d
3.5
e
4.0
f
4.5
g
5.0
h
6.0
i
7.0
j
8.0
a
RDS (on) 0.8
0.7
0.6
BDTIC
2.0
1.6
b
1.2
k
9.0
l
10.0
0.5
0.4
0.3
0.8
0.2
0.4
0.1
0.0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
b
i
j
VGS [V] =
0.0
0.0
5.0
c
d
f e g
h
k
a
2.5
2.0
b
3.0
0.2
c
3.5
d
4.0
0.4
e
f
4.5 5.0
0.6
g
6.0
0.8
h
i
7.0 8.0
1.0
VDS
j
9.0
k
10.0
A
Typ. transfer characteristics ID = f(VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
parameter: tp = 80 µs,
VDS≥ 2 x ID x RDS(on)max
VDS≥2 x ID x RDS(on)max
6.5
6.5
A
S
5.5
ID
5.5
gfs
5.0
5.0
4.5
4.5
4.0
4.0
3.5
3.5
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0
1
2
3
4
5
6
7
8
V
10
0.0
0.0
1.0
2.0
3.0
VGS
Rev 2.0
1.4
ID
4.0
A
6.0
ID
6
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2008-03-31
BSP372
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 1.7 A, VGS = 5 V
Gate threshold voltage
VGS (th) = ƒ(Tj )
parameter: VGS = VDS, ID = 1 mA
1.0
4.6
Ω
V
4.0
RDS (on)
0.8
VGS(th)
0.7
3.6
3.2
0.6
2.8
0.5
2.4
BDTIC
98%
0.4
98%
2.0
typ
1.6
typ
0.3
1.2
2%
0.2
0.8
0.1
0.4
0.0
-60
-20
20
60
100
˚C
0.0
-60
160
-20
20
60
100
˚C
Tj
160
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 4
10 1
pF
A
IF
C
10 3
10 0
Ciss
10 2
10 -1
Tj = 25 ˚C typ
Coss
Tj = 150 ˚C typ
Crss
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 1
0
5
10
15
20
25
30
V
40
10 -2
0.0
0.4
0.8
1.2
1.6
Rev 2.0
2.0
2.4
V
3.0
VSD
VDS
7
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2008-03-31
BSP372
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 1.7 A, VDD = 25 V
RGS = 25 Ω, L = 23.3 mH
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
50
120
V
mJ
116
EAS
40
V(BR)DSS114
112
35
110
30
108
BDTIC
106
25
104
20
102
100
15
98
10
96
94
5
0
20
40
60
80
100
120
˚C
160
92
90
-60
-20
20
60
Tj
100
˚C
160
Tj
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25˚C
Rev 2.0
8
www.BDTIC.com/infineon
2008-03-31
BSP372
BDTIC
Rev 2.0
9
www.BDTIC.com/infineon
2008-03-31