BDTIC SOP8 Plastic-Encapsulate MOSFETS CJQ4953

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4953
P-Channel 30-V(D-S) MOSFET
SOP8
Equivalent circuit
BDTIC
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current ( t≤10s)
ID
-5
A
Power Dissipation ( t≤10s)
PD
1.25
W
RθJA
100
℃/W
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55~+150
Thermal Resistance from Junction to Ambient ( t≤10s)
V
℃
D,Mar,2013
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Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
V(BR)DSS
VGS =0V, ID =-250µA
-30
V
VGS(th)
VDS =VGS, ID =-250µA
-1.0
V
Gate-body leakage
IGSS
VDS =0V, VGS =±20V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-30V, VGS =0V
-1
µA
VGS =-10V, ID =-4.9A
60
VGS =-4.5V, ID =-3.7A
90
Gate-threshold voltage
Drain-source on-resistancea
RDS(on)
Forward transconductancea
gfs
VDS =-10V, ID =-4.9A
VSD
IS=-1.7A,VGS=0V
a
Diode forward voltage
6.0
mΩ
S
-1.2
V
b
Dynamic
BDTIC
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
25
VDS =-15V,VGS =-10V,ID =-4.9A
nC
4
2
15
VDD=-15V,RL=15Ω, ID ≈-1A,
20
VGEN=-10V,RG=6Ω
80
tf
nS
40
Notes :
a.
b.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
Guaranteed by design, not subject to production testing.
D,Mar,2013
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Typical Characteristics
CJQ4953
Output Characteristics
-25
Transfer Characteristics
-5
-10V
-8V
-5V
Ta=25℃
Pulsed
Ta=25℃
VGS=-4.5V
-20
Pulsed
-4
VGS=-3.5V
-10
ID
-15
-3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(A)
VGS=-4.0V
-2
-5
-1
BDTIC
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE
RDS(ON)
——
VDS
-0
-5
-0
(V)
-1
-2
GATE TO SOURCE VOLTAGE
-3
VGS
-4
(V)
RDS(ON) —— VGS
ID
100
140
Ta=25℃
Ta=25℃
Pulsed
Pulsed
120
(mΩ)
(mΩ)
80
100
RDS(ON)
60
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
VGS=-4.5V
VGS=-10V
40
80
ID=-4.3A
60
40
20
-0
-2
-4
-6
DRAIN CURRENT
IS
——
ID
-8
-10
(A)
20
-2
-4
-6
GATE TO SOURCE VOLTAGE
-8
VGS
-10
(V)
VSD
-10
Ta=25℃
Pulsed
-0.1
SOURCE CURRENT
IS
(A)
-1
-0.01
-1E-3
-1E-4
-1E-5
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
-1.0
VSD
-1.2
(V)
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D,Mar,2013