BDTIC SOT-23 Plastic-Encapsulate MOSFETS CJ2302

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2302 N-Channel 20-V(D-S) MOSFET
SOT-23
FEATURE
TrenchFET Power MOSFET
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
z
Load Switch for Portable Devices
z
DC/DC Converter
BDTIC
MARKING: S2
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
2.1
Continuous Source-Drain Current(Diode Conduction)
IS
0.6
Power Dissipation
PD
0.35
W
RθJA
357
℃/W
Operating Junction
TJ
150
Storage Temperature
TSTG
-55 ~+150
Thermal Resistance from Junction to Ambient (t≤5s)
V
A
℃
A,Dec,2010
www.BDTIC.com/jcst
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
0.95
1.2
Units
Static
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =10µA
20
VGS(th)
VDS =VGS, ID =50µA
0.65
Gate-body leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =20V, VGS =0V
1
µA
Gate-threshold voltage
VGS =4.5V, ID =3.6A
0.045
0.060
VGS =2.5V, ID =3.1A
0.070
0.115
Drain-source on-resistancea
rDS(on)
Forward transconductancea
gfs
VDS =5V, ID =3.6A
8
Diode forward voltage
VSD
IS=0.94A,VGS=0V
0.76
1.2
4.0
10
V
Ω
S
V
Dynamic
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
1.5
Ciss
300
BDTIC
Input capacitance
b
Output capacitance b
Reverse transfer capacitance
Switching
Coss
b
VDS =10V,VGS =4.5V,ID =3.6A
VDS =10V,VGS =0V,f=1MHz
Crss
nC
0.65
pF
120
80
b
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
VDD=10V,
RL=5.5Ω, ID ≈3.6A,
VGEN=4.5V,Rg=6Ω
7
15
55
80
16
60
10
25
ns
Notes :
a.
b.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
These parameters have no way to verify.
A,Dec,2010
www.BDTIC.com/jcst
Typical Characteristics
CJ2302
Output Characteristics
Transfer Characteristics
10
15
VGS=3.5V,3.0V,2.5V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=2.0V
8
6
DRAIN CURRENT
ID
9
DRAIN CURRENT
ID
(A)
(A)
12
VGS=1.5V
6
4
2
3
BDTIC
0
0.0
0
0
2
4
6
8
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
VDS
10
(V)
RDS(ON) ——
ID
1.5
2.0
VGS
2.5
(V)
VGS
0.20
Ta=25℃
Ta=25℃
Pulsed
Pulsed
0.16
RDS(ON)
(mΩ)
( Ω)
80
60
ON-RESISTANCE
RDS(ON)
1.0
GATE TO SOURCE VOLTAGE
100
ON-RESISTANCE
0.5
VGS=2.5V
40
VGS=4.5V
20
0.12
0.08
ID=4.5A
0.04
0
0.00
0
5
10
15
DRAIN CURRENT
20
ID
(A)
25
30
0
2
4
6
GATE TO SOURCE VOLTAGE
www.BDTIC.com/jcst
8
VGS
10
(V)
A,Dec,2010