SOT-23 Plastic-Encapsulate MOSFETS CJ3401A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
SOT-23
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE
z
High dense cell design for extremely low RDS(ON).
z
Exceptional on-resistance and maximum DC current capability
D
1. GATE
2. SOURCE
3. DRAIN
MARKING: R1A
G
BDTIC
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-4.2
A
Power Dissipation
PD
400
mW
RθJA
313
℃/W
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
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S
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =-250µA
-30
V
Zero gate voltage drain current
IDSS
VDS =-24V,VGS = 0V
-1
µA
Gate-source leakage current
IGSS
VGS =±12V, VDS = 0V
±100
nA
VGS =-10V, ID =-4.2A
60
mΩ
VGS =-4.5V, ID =-4A
70
mΩ
VGS =-2.5V,ID=-1A
85
mΩ
On characteristics
Drain-source on-resistance
RDS(on)
(note 1)
Forward tranconductance (note 1)
Gate threshold voltage
Dynamic characteristics
gFS
VGS(th)
VDS =-5V, ID =-5A
VDS =VGS, ID =-250µA
7
S
-0.7
-1.3
V
(note 2)
BDTIC
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching characteristics
1050
pF
127
pF
85
pF
VDS =-15V,VGS =0V,f =1MHz
(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall Time
6.5
ns
VGS=-10V,VDS=-15V,
3.5
ns
RL=3.6Ω,RGEN=6Ω
40
ns
13
ns
-1
V
td(on)
tr
td(off)
tf
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 1)
VSD
IS=-1A,VGS=0V
Note :
1.
2.
Pulse Test : Pulse width≤300µs, duty cycle≤2%.
These parameters have no way to verify.
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Typical Characteristics
CJ3401A
Transfer Characteristics
Output Characteristics
-25
-5
VGS=-10V
Ta=25℃
VGS=-4.5V
Ta=25℃
VGS=-3.0V
Pulsed
Pulsed
VGS=-2.0V
ID
DRAIN CURRENT
-10
VGS=-2.5V
-3
DRAIN CURRENT
ID
-15
(A)
-4
(A)
-20
-2
-5
-1
BDTIC
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE
RDS(ON)
——
VDS
-0
-0.0
-5
(V)
-0.5
-1.0
-1.5
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
——
-2.0
VGS
-2.5
(V)
VGS
100
120
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-4.5V
60
VGS=-10V
40
20
-0
-2
-4
-6
DRAIN CURRENT
IS
-10
——
ID
-8
80
RDS(ON)
80
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
VGS=-2.5V
(mΩ)
(mΩ)
100
-10
(A)
60
ID=-2A
40
20
-0
-2
-4
VSD
Ta=25℃
Pulsed
-0.1
SOURCE CURRENT
IS
(A)
-1
-0.01
-1E-3
-1E-4
-1E-5
-0.0
-0.3
-0.6
SOURCE TO DRAIN VOLTAGE
-0.9
VSD
-6
GATE TO SOURCE VOLTAGE
-1.2
(V)
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-8
VGS
(V)
-10