SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate MOSFETS
CJA9451
P-Channel 20-V(D-S) MOSFET
Description
The Advanced Power MOSFETs provide the desigher with the
best combination of fast switching, ruggedized device desigh, ultra low
on- resistance and cost-effectiveness.
SOT-89-3L
1. GATE
2. DRAIN
3. SOURCE
1
22
3
BDTIC
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source Voltage
VDS
-20
Continuous Gate-Source Voltage
VGS
±12
Continuous Drain Current
ID
-2.3
A
Power Dissipation
PD
0.5
W
RθJA
250
℃/W
Tj
150
Tstg
-55 ~+150
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
V
℃
B,Aug,2011
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Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit̀
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =10µA
-20
V
Gate-body leakage
IGSS
VDS =0V, VGS =±12V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-20V, VGS =0V
-1.0
µA
-1.50
V
On characteristics
Gate-threshold voltage
VGS(th)
Static drain-source on-resistance (note 1)
RDS(on)
Forward transconductance (note 1)
gfs
VDS =VGS, ID =-0.25mA
-0.50
VGS =-4.5V, ID =-2.3A
0.135
VGS =-2.5V, ID =-1.0A
0.240
VDS =-5V, ID =-2.3A
Ω
2.3
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
430
BDTIC
VDS =-20V,VGS =0V, f=1MHz
Output capacitance
Coss
Reverse transfer capacitance
Crss
35
td(on)
9
pF
100
Switching characteristics
Turn-on delay time (note 1,2)
Rise time (note 2)
tr
Turn-off delay time (note 2)
td(off)
Fall time (note 2)
VGS=-5V, VDS=-10V,
ID =-1A,RG=3.3Ω, RD=10Ω
tf
25
ns
20
10
Drain-source body diode characteristics
Body diode forward voltage (note 1)
VSD
IS=-1A, VGS = 0V
-1.6
No tes:
1.
2.
Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
These parameters have no way to verify.
B,Aug,2011
www.BDTIC.com/jcst
V
CJA9451
Typical Characteristics
Output Characteristics
Transfer Characteristics
-20
-20
Ta=25℃
Pulsed
VGS=-4.5V
-4V
-3.5V
-3V
Ta=25℃
Pulsed
-2.5V
ID
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
-15
(A)
-15
VDS=-5V
-2V
-10
-5
VGS=-1.5V
-10
-5
BDTIC
-0
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
-4
VDS
-5
-0
(V)
-1
-2
-3
GATE TO SOURCE VOLTAGE
VGS
-4
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
240
240
Ta=25℃
Pulsed
Ta=25℃
Pulsed
200
(m)
(m)
200
VGS=-4.5V
80
160
RDS(ON)
VGS=-2.5V
120
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
160
40
120
ID=-2.3A
80
40
0
0
-0
-2
-4
-6
DRAIN CURRENT
ID
-8
-10
(A)
-0
-2
-4
IS —— VSD
-1
SOURCE CURRENT
IS (A)
Ta=25℃
Pulsed
-0.1
-0.01
-1E-3
-0.2
-0.4
-0.6
SOURCE TO DRAIN VOLTAGE
-6
GATE TO SOURCE VOLTAGE
-0.8
-1.0
VSD (V)
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-8
VGS
(V)
-10