SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAV16WS/1N4148WS
FAST SWITCHING DIODE
SOD-323
FEATURES
BDTIC
MARKING: T6, T4
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
VRM
100
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
100
V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
71
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
150
mA
Peak Forward Surge Current @t=1.0μs
2.0
IFSM
@ t=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
A
1.0
Pd
200
mW
RθJA
625
℃/W
Junction Temperature
Tj
Storage Temperature
TSTG
150
℃
-55~+150
℃
Electrical Ratings @Ta=25℃
Parameter
Symbol
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Min
Typ
Max
Unit
Conditions
VF1
0.715
V
IF=1mA
VF2
0.855
V
IF=10mA
VF3
1.0
V
IF=50mA
VF4
1.25
V
IF=150mA
IR1
1
μA
VR=75V
IR2
25
nA
VR=20V
CT
2
pF
VR=0V,f=1MHz
trr
4
ns
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IF=IR=10mA
Irr=0.1XIR,RL=100Ω
Typical Characteristics
Forward
200
BAV16WS/1N4148WS
Characteristics
Reverse
1000
Characteristics
100
(nA)
(mA)
Ta=100℃
REVERSE CURRENT IR
T=
a 2
5℃
FORWARD CURRENT
IF
T=
a 1
00
℃
10
1
0.1
0.01
0.0
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
100
1
1.2
Ta=25℃
10
0
20
(V)
40
REVERSE VOLTAGE
60
VR
80
(V)
BDTIC
Capacitance Characteristics
1.2
Power Derating Curve
300
Ta=25℃
f=1MHz
(mW)
PD
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
1.0
200
150
100
50
0.8
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
150