TO-220F Plastic-Encapsulate Diodes MBR30200FCT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR30200FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
BDTIC
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
Value
Unit
200
V
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
140
V
Average rectified output current
30
A
200
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IO
IFSM
PD
RΘJA
Non-Repetitive peak forward surge current
8.3ms half sine wave
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Reverse voltage
V(BR)
Reverse current
IR
Forward voltage
Typical total capacitance
Test conditions
IR=1mA
Min
Typ
Max
200
Unit
V
VR=200V
0.1
mA
VF1
IF=15A
1
V
VF2*
IF=30A
1.1
V
Ctot
VR=4V,f=1MHz
*Pulse test
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800
pF
Typical Characteristics
Forward
MBR30200FCT
Characteristics
Reverse
Characteristics
1000
30000
10000
(uA)
(mA)
1000
REVERSE CURRENT IR
IF
FORWARD CURRENT
Ta=100℃
100
100
1
Ta=25℃
0.1
T =2
a
5℃
T=
a 10
0℃
10
10
0.01
1
0
100
200
300
400
500
600
FORWARD VOLTAGE
700
VF
800
900
1000
1
1100
25
50
75
100
125
REVERSE VOLTAGE
(mV)
150
VR
175
200
(V)
BDTIC
Capacitance Characteristics
Power Derating Curve
400
2.5
Ta=25℃
2.0
PD
(W)
300
1.5
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
200
100
0
1.0
0.5
0.0
0
5
10
15
20
REVERSE VOLTAGE
25
VR
(V)
30
35
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
(℃ )
125