TO-263-2L Plastic-Encapsulate Diodes B10100CT MBR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10100CT
SCHOTTKY BARRIER RECTIFIER
TO-263-2L
FEATURE






Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
100
V
RMS reverse voltage
70
V
Average rectified output current
10
A
120
A
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR(RMS)
IO
IFSM
Non-repetitive peak forward surge current @8.3ms half sine wave
PD
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
TJ
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
IR=0.1mA
Reverse current
IR
VR=100V
0.01
mA
VF(1)
IF=5A
0.85
V
VF(2)*
IF=10A
0.95
V
Forward voltage
Total capacitance
Ctot
100
VR=4V,f=1MHz
*Pulse test
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V
90
pF
Typical Characteristics
Forward
MBRB10100CT
Characteristics
Reverse
Characteristics
1000
10000
Ta=100℃
(uA)
1000
T =2
a
5℃
REVERSE CURRENT IR
100
T=
a 10
0℃
FORWARD CURRENT
IF
(mA)
100
10
10
1
0.1
Ta=25℃
0.01
1E-3
1
0
100
200
300
400
500
600
FORWARD VOLTAGE
VF
700
800
900
1
1000
10
100
REVERSE VOLTAGE
(mV)
VR
(V)
BDTIC
Capacitance Characteristics
Power Derating Curve
300
2.5
Ta=25℃
f=1MHz
(W)
2.0
PD
200
1.5
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
150
100
1.0
0.5
50
0
0.0
0
2
4
6
REVERSE VOLTAGE
8
VR
(V)
10
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
(℃ )
125