SOT-23 Plastic-Encapsulate Diodes DAP202

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
SOT-23
DAP202
SWITCHING DIODE
FEATURES
 High Speed
 High Reliability
 Suitable for High Packing Density Layout
APPLICATIONS
BDTIC
 High Speed Switching
MARKING: P
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VR
DC Blocking Voltage
80
V
IO
Continuous Forward Current
100
mA
IFM
Peak Forward Current
300
mA
ISM
Surge Current
4
A
PD
Power Dissipation
200
mW
Thermal Resistance from Junction to Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Typ
Max
V(BR)
Reverse current
IR
VR=70V
0.1
μA
Forward voltage
VF
IF=100mA
1.2
V
Total capacitance
Ctot
VR=6V,f=1MHz
3.5
pF
4
ns
trr
80
Unit
Reverse voltage
Reverse recovery time
IR=100μA
Min
IF= IR=5mA, VR=6V
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V
Typical Characteristics
Forward
100
Characteristics
Characteristics
300
(nA)
(mA)
Ta
=2
5℃
3
REVERSE CURRENT IR
10
Ta
=1
00
℃
IF
Reverse
1000
30
FORWARD CURRENT
DAP202
1
Ta=100℃
100
30
10
Ta=25℃
3
0.3
0.1
0.0
1
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
1.2
0
20
(V)
40
REVERSE VOLTAGE
60
VR
80
(V)
BDTIC
Capacitance Characteristics
1.4
Power Derating Curve
300
Ta=25℃
f=1MHz
(mW)
PD
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
1.3
1.2
1.1
200
150
100
50
1.0
0
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃)
150