SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS
SOD-323
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
MARKING: B5817WS: SJ
B5818WS:SK
B5819WS: SL
BDTIC
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
B5817WS
B5818WS
B5819WS
Unit
Non-repetitive peak reverse voltage
VRM
20
30
40
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
20
30
40
V
RMS reverse voltage
VR(RMS)
14
21
28
V
Average rectified output current
IO
1
A
Peak forward surge current @t=8.3ms
IFSM
9
A
Repetitive peak forward current
IFRM
1.5
A
Power dissipation
Pd
250
mW
Thermal resistance junction to
ambient
RθJA
400
℃/W
Junction temperature
TJ
125
℃
Storage temperature
TSTG
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unles s other wise specified)
Parameter
Symbol
Test
conditions
IR= 1mA
Reverse breakdown voltage
Forward voltage
IR
VF
VR=20V
VR=30V
VR=40V
B5817WS
IF=1A
0.45
IF=3A
0.75
IF=1A
0.55
IF=3A
0.875
IF=1A
0.6
IF=3A
0.9
B5818WS
B5819WS
Diode capacitance
CD
Max
B5817WS
B5818WS
B5819WS
B5817WS
B5818WS
B5819WS
V(BR)
Reverse voltage leakage current
Min
VR=4V, f=1MHz
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20
30
40
Unit
V
1
120
mA
V
V
V
pF
Typical Characteristics
B5818WS
Reverse Characteristics
Forward Characteristics
10000
3000
(mA)
1000
Ta=100℃
(uA)
1000
REVERSE CURRENT IR
FORWARD CURRENT
IF
Ta=100℃
100
Ta=25℃
10
100
10
Ta=25℃
1
BDTIC
1
0.0
0.1
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
1.0
0
5
10
VF (V)
15
20
REVERSE VOLTAGE
VR
25
30
(V)
Power Derating Curve
Capacitance Characteristics
300
200
Ta=25℃
250
PD
(mW)
160
120
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
80
200
150
100
40
50
0
0
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
(℃ )
125